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Optical transitions in strained Ge/Si superlattices

Schmidt, U. and Humlíček, J. and Lukes, F. and Cardona, M. and Presting, H. and Kibbel, H. and Kasper, E. and Eberl, Karl and Wegscheider, Werner and Abstreiter, Gerhard (1992) Optical transitions in strained Ge/Si superlattices. Thin Solid Films 222 (1-2), pp. 246-250.

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Abstract

Band-to-band infrared absorption has been studied in a series of Sn1Gem (m=11, 15, and 21) strained layer superlattices for the first time. The absorption coefficient shows a quadratic increase with two onsets, characteristic for indirect transitions. From a numerical fit to the absorption spectra, band gap energies are determined in the energy range between 0.55 and 0.75 eV, in accordance with ...

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Item Type:Article
Date:16 December 1992
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1016/0040-6090(92)90078-PDOI
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:26 Oct 2009 14:05
Last Modified:13 Mar 2014 11:19
Item ID:10005
Owner Only: item control page

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