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Optical transitions in strained Ge/Si superlattices

Schmidt, U. and Humlíček, J. and Lukes, F. and Cardona, M. and Presting, H. and Kibbel, H. and Kasper, E. and Eberl, Karl and Wegscheider, Werner and Abstreiter, Gerhard (1992) Optical transitions in strained Ge/Si superlattices. Thin Solid Films 222 (1-2), pp. 246-250.

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Band-to-band infrared absorption has been studied in a series of Sn1Gem (m=11, 15, and 21) strained layer superlattices for the first time. The absorption coefficient shows a quadratic increase with two onsets, characteristic for indirect transitions. From a numerical fit to the absorption spectra, band gap energies are determined in the energy range between 0.55 and 0.75 eV, in accordance with ...


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Item type:Article
Date:16 December 1992
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
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Dewey Decimal Classification:500 Science > 530 Physics
Created at the University of Regensburg:Unknown
Deposited on:26 Oct 2009 14:05
Last modified:13 Mar 2014 11:19
Item ID:10005
Owner only: item control page


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