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Properties of Sn/Ge superlattices

Olajos, Janos and Abstreiter, Gerhard and Schorer, R. and Vogl, P. and Wegscheider, Werner (1993) Properties of Sn/Ge superlattices. Semiconductor Science and Technology 8 (1S ), pp. 6-8.

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Abstract

Short-period strained-layer alpha -Sn/Ge superlattices have been synthesized recently by a low temperature molecular beam epitaxy technique which allows a large variation of substrate temperature. Thin, tetragonally distorted alpha Sn layers h ave been stabilized on Ge substrates by growth conditions far way from thermal equilibrium. The fundamental bandgap of Sn/Ge superlattices is shifted ...

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Item Type:Article
Date:1993
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1088/0268-1242/8/1S/002DOI
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:26 Oct 2009 14:31
Last Modified:13 Mar 2014 11:19
Item ID:10018
Owner Only: item control page
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