Olajos, Janos and Abstreiter, Gerhard and Schorer, R. and Vogl, P. and Wegscheider, Werner (1993) Properties of Sn/Ge superlattices. Semiconductor Science and Technology 8 (1S ), pp. 6-8.
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Short-period strained-layer alpha -Sn/Ge superlattices have been synthesized recently by a low temperature molecular beam epitaxy technique which allows a large variation of substrate temperature. Thin, tetragonally distorted alpha Sn layers h ave been stabilized on Ge substrates by growth conditions far way from thermal equilibrium. The fundamental bandgap of Sn/Ge superlattices is shifted towards lower energies with increasing average Sn concentration, as expected from theory.
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|Institutions:||Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider|
|Dewey Decimal Classification:||500 Science > 530 Physics|
|Created at the University of Regensburg:||Unknown|
|Deposited on:||26 Oct 2009 14:31|
|Last modified:||13 Mar 2014 11:19|