Wegscheider, Werner and Pfeiffer, Loren and West, Kenneth and Leibenguth, Ronald E. (1994) Current injection GaAs/AlGaAs quantum wire lasers fabricated by cleaved edge overgrowth. Applied Physics Letters 65 (20), pp. 2510-2512.
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We report the operation of quantum wire (QWR) semiconductor diode lasers fabricated by cleaved edge overgrowth. The active region in these index guided lasers consists of 15 QWRs formed at the right angle intersection of 15  oriented quantum wells (QWs) each 7 nm wide, with a single 7-nm-wide QW grown along the  direction. Doping with Be and Si in the two orthogonal growth directions ...
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|Date:||14 November 1994|
|Institutions:||Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider|
|Dewey Decimal Classification:||500 Science > 530 Physics|
|Created at the University of Regensburg:||Unknown|
|Deposited on:||02 Nov 2009 13:17|
|Last modified:||13 Mar 2014 11:58|