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Current injection GaAs/AlGaAs quantum wire lasers fabricated by cleaved edge overgrowth

Wegscheider, Werner and Pfeiffer, Loren and West, Kenneth and Leibenguth, Ronald E. (1994) Current injection GaAs/AlGaAs quantum wire lasers fabricated by cleaved edge overgrowth. Applied Physics Letters 65 (20), pp. 2510-2512.

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Abstract

We report the operation of quantum wire (QWR) semiconductor diode lasers fabricated by cleaved edge overgrowth. The active region in these index guided lasers consists of 15 QWRs formed at the right angle intersection of 15 [001] oriented quantum wells (QWs) each 7 nm wide, with a single 7-nm-wide QW grown along the [110] direction. Doping with Be and Si in the two orthogonal growth directions ...

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Item Type:Article
Date:14 November 1994
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1063/1.112619DOI
Related URLs:
URLURL Type
http://link.aip.org/link/?APPLAB/65/2510/1Publisher
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:02 Nov 2009 13:17
Last Modified:13 Mar 2014 11:58
Item ID:10833
Owner Only: item control page
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