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Separately contacted electron-hole double layer in a GaAs/AlxGa1−xAs heterostructure

Kane, B. E. and Eisenstein, J. P. and Wegscheider, Werner and Pfeiffer, Loren N. and West, Kenneth W. (1994) Separately contacted electron-hole double layer in a GaAs/AlxGa1−xAs heterostructure. Applied Physics Letters 65 (25), pp. 3266-3268.

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Abstract

We describe a method for creating closely spaced parallel two-dimensional electron and hole gases confined in 200 Å GaAs wells separated by a 200 Å wide AlxGa1−xAs barrier. Low-temperature ohmic contacts are made to both the electrons and holes, whose densities are individually adjustable between 1010/cm2 to greater than 1011/cm2.

Item Type:Article
Institutions: Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1063/1.112432DOI
Related URLs:
URLURL Type
http://link.aip.org/link/?APPLAB/65/3266/1Publisher
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner:Martin Kaiser
Deposited On:02 Nov 2009 14:19
Last Modified:21 Jul 2011 00:06
Item ID:10834
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