Kane, B. E. and Eisenstein, J. P. and Wegscheider, Werner and Pfeiffer, Loren N. and West, Kenneth W. (1994) Separately contacted electron-hole double layer in a GaAs/AlxGa1−xAs heterostructure. Applied Physics Letters 65 (25), pp. 3266-3268.
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We describe a method for creating closely spaced parallel two-dimensional electron and hole gases confined in 200 Å GaAs wells separated by a 200 Å wide AlxGa1−xAs barrier. Low-temperature ohmic contacts are made to both the electrons and holes, whose densities are individually adjustable between 1010/cm2 to greater than 1011/cm2.
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|Date:||19 December 1994|
|Institutions:||Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider|
|Dewey Decimal Classification:||500 Science > 530 Physics|
|Created at the University of Regensburg:||Unknown|
|Deposited on:||02 Nov 2009 13:19|
|Last modified:||13 Mar 2014 11:58|