Wegscheider, Werner and Pfeiffer, Loren N. and West, Kenneth W. and Pinczuk, A. and Dignam, M. M. and Hull, R. and Leibenguth, R. E. (1995) GaAs/AlGaAs quantum wire lasers fabricated by cleaved edge overgrowth. Journal of Crystal Growth 150 (1), pp. 285-292.
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We have used the molecular beam growth technique which we call “cleaved edge overgrowth” to fabricate quantum wire lasers, in which 1D quantum confinement is entirely defined by the growth process. The active region of our lasers consists of atomically precise quantum wires that form at the T-shaped intersections of 7 nm wide GaAs quantum wells grown along the  crystal axis and after an in ...
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|Date:||1 May 1995|
|Institutions:||Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider|
|Dewey Decimal Classification:||500 Science > 530 Physics|
|Created at the University of Regensburg:||Unknown|
|Deposited On:||02 Nov 2009 14:09|
|Last Modified:||13 Mar 2014 11:59|