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Single-electron transistor fabricated by focused laser beam-induced doping of a GaAs/AlGaAs heterostructure

Baumgartner, P. and Wegscheider, Werner and Bichler, Max and Schedelbeck, G. and Neumann, Richard and Abstreiter, Gerhard (1997) Single-electron transistor fabricated by focused laser beam-induced doping of a GaAs/AlGaAs heterostructure. Applied Physics Letters 70 (16), pp. 2135-2137.

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Abstract

A single-electron transistor has been fabricated by an optical fabrication method. A small dot, a source and drain reservoir, and in-plane gates are all built from the two-dimensional electron gas of an n-type GaAs/AlGaAs heterostructure. Laser-written p-doped lines are used to define this dot with a diameter of about 70 nm and to insulate it from the in-plane gates. Tunnel junctions connect the ...

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Item Type:Article
Date:21 April 1997
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1063/1.118969DOI
Related URLs:
URLURL Type
http://link.aip.org/link/?APPLAB/70/2135/1Publisher
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:02 Nov 2009 13:20
Last Modified:13 Mar 2014 11:58
Item ID:10837
Owner Only: item control page
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