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Atomically Precise GaAs/AlGaAs Quantum Dots Fabricated by Twofold Cleaved Edge Overgrowth

Wegscheider, Werner and Schedelbeck, G. and Abstreiter, Gerhard and Rother, M. and Bichler, Max (1997) Atomically Precise GaAs/AlGaAs Quantum Dots Fabricated by Twofold Cleaved Edge Overgrowth. Physical Review Letters 79 (10), pp. 1917-1920.

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Abstract

The formation of a 7×7×7 nm3 size GaAs quantum dot (QD) at the intersection of three quantum wells is demonstrated for the first time. Intense radiative recombination between zero-dimensional states in the QDs is clearly identified by microscopic photoluminescence ( μPL). In contrast to the inhomogeneously broadened quantum well and quantum wire signals originating from the complex twofold ...

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Item Type:Article
Date:8 September 1997
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1103/PhysRevLett.79.1917DOI
Related URLs:
URLURL Type
http://link.aps.org/doi/10.1103/PhysRevLett.79.1917Publisher
Classification:
NotationType
73.20.Dx, 73.20.At, 78.55.Cr PACS
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:02 Nov 2009 13:23
Last Modified:13 Mar 2014 11:58
Item ID:10840
Owner Only: item control page
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