Wegscheider, Werner and Schedelbeck, G. and Abstreiter, Gerhard and Rother, M. and Bichler, Max (1997) Atomically Precise GaAs/AlGaAs Quantum Dots Fabricated by Twofold Cleaved Edge Overgrowth. Physical Review Letters 79 (10), pp. 1917-1920.
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The formation of a 7×7×7 nm3 size GaAs quantum dot (QD) at the intersection of three quantum wells is demonstrated for the first time. Intense radiative recombination between zero-dimensional states in the QDs is clearly identified by microscopic photoluminescence ( μPL). In contrast to the inhomogeneously broadened quantum well and quantum wire signals originating from the complex twofold ...
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|Date:||8 September 1997|
|Institutions:||Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider|
|Dewey Decimal Classification:||500 Science > 530 Physics|
|Created at the University of Regensburg:||Unknown|
|Deposited on:||02 Nov 2009 13:23|
|Last modified:||13 Mar 2014 11:58|