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Direct writing of in-plane-gated nanostructures by focused laser beam-induced doping

Baumgartner, P. and Wegscheider, Werner and Bichler, Max and Groos, G. and Abstreiter, Gerhard (1998) Direct writing of in-plane-gated nanostructures by focused laser beam-induced doping. Physica E Low-dimensional Systems and Nanostructures 2 (1-4), pp. 441-448.

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Abstract

The fabrication technique of local doping with a focused laser beam is employed to fabricate electronic nanostructures. Zn-doped regions are used to fabricate in-plane electron channels in a high mobility GaAs/AlGaAs heterostructure. The operation of different devices, like quantum point contacts, single electron transistors or Aharonov–Bohm rings, is demonstrated. The coplanar gate geometry ...

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Item Type:Article
Date:15 July 1998
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1016/S1386-9477(98)00091-5DOI
Keywords:Transport; Electronic nanostructures; Fabrication technique
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:09 Nov 2009 13:07
Last Modified:13 Mar 2014 12:02
Item ID:10873
Owner Only: item control page

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