Baumgartner, P. and Wegscheider, Werner and Bichler, Max and Groos, G. and Abstreiter, Gerhard (1998) Direct writing of in-plane-gated nanostructures by focused laser beam-induced doping. Physica E Low-dimensional Systems and Nanostructures 2 (1-4), pp. 441-448.
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The fabrication technique of local doping with a focused laser beam is employed to fabricate electronic nanostructures. Zn-doped regions are used to fabricate in-plane electron channels in a high mobility GaAs/AlGaAs heterostructure. The operation of different devices, like quantum point contacts, single electron transistors or Aharonov–Bohm rings, is demonstrated. The coplanar gate geometry improves the performance of the devices in charge sensing applications.
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|Date:||15 July 1998|
|Institutions:||Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider|
|Keywords:||Transport; Electronic nanostructures; Fabrication technique|
|Dewey Decimal Classification:||500 Science > 530 Physics|
|Created at the University of Regensburg:||Unknown|
|Deposited on:||09 Nov 2009 13:07|
|Last modified:||13 Mar 2014 12:02|