Baumgartner, P. and Wegscheider, Werner and Bichler, Max and Groos, G. and Abstreiter, Gerhard (1998) Direct writing of in-plane-gated nanostructures by focused laser beam-induced doping. Physica E Low-dimensional Systems and Nanostructures 2 (1-4), pp. 441-448.
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The fabrication technique of local doping with a focused laser beam is employed to fabricate electronic nanostructures. Zn-doped regions are used to fabricate in-plane electron channels in a high mobility GaAs/AlGaAs heterostructure. The operation of different devices, like quantum point contacts, single electron transistors or Aharonov–Bohm rings, is demonstrated. The coplanar gate geometry ...
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|Date:||15 July 1998|
|Institutions:||Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider|
|Keywords:||Transport; Electronic nanostructures; Fabrication technique|
|Subjects:||500 Science > 530 Physics|
|Created at the University of Regensburg:||Unknown|
|Deposited On:||09 Nov 2009 13:07|
|Last Modified:||13 Mar 2014 12:02|