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Direct writing of in-plane-gated nanostructures by focused laser beam-induced doping

Baumgartner, P. and Wegscheider, Werner and Bichler, Max and Groos, G. and Abstreiter, Gerhard (1998) Direct writing of in-plane-gated nanostructures by focused laser beam-induced doping. Physica E Low-dimensional Systems and Nanostructures 2 (1-4), pp. 441-448.

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Abstract

The fabrication technique of local doping with a focused laser beam is employed to fabricate electronic nanostructures. Zn-doped regions are used to fabricate in-plane electron channels in a high mobility GaAs/AlGaAs heterostructure. The operation of different devices, like quantum point contacts, single electron transistors or Aharonov–Bohm rings, is demonstrated. The coplanar gate geometry improves the performance of the devices in charge sensing applications.


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Item Type:Article
Date:15 July 1998
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1016/S1386-9477(98)00091-5DOI
Keywords:Transport; Electronic nanostructures; Fabrication technique
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Deposited On:09 Nov 2009 13:07
Last Modified:13 Mar 2014 12:02
Item ID:10873
Owner Only: item control page

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