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In-plane gates and nanostructures fabricated by direct oxidation of semiconductor heterostructures with an atomic force microscope

Held, R. and Vancura, T. and Heinzel, Thomas and Ensslin, Klaus and Holland, M. and Wegscheider, Werner (1998) In-plane gates and nanostructures fabricated by direct oxidation of semiconductor heterostructures with an atomic force microscope. Applied Physics Letters 73 (2), pp. 262-264.

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Abstract

The surface of shallow Ga[Al]As heterostructures is locally oxidized with an atomic force microscope. The electron gas underneath the oxide is depleted. We demonstrate experimentally that these depleted regions of the two-dimensional electron gas can be made highly resistive at liquid nitrogen temperatures. Thus, local anodic oxidation of high electron mobility transistors with an atomic force ...

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Item Type:Article
Date:13 July 1998
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1063/1.121774DOI
Related URLs:
URLURL Type
http://link.aip.org/link/?APPLAB/73/262/1Publisher
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:09 Nov 2009 13:17
Last Modified:13 Mar 2014 12:02
Item ID:10881
Owner Only: item control page

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