Held, R. and Vancura, T. and Heinzel, Thomas and Ensslin, Klaus and Holland, M. and Wegscheider, Werner (1998) In-plane gates and nanostructures fabricated by direct oxidation of semiconductor heterostructures with an atomic force microscope. Applied Physics Letters 73 (2), pp. 262-264.
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The surface of shallow Ga[Al]As heterostructures is locally oxidized with an atomic force microscope. The electron gas underneath the oxide is depleted. We demonstrate experimentally that these depleted regions of the two-dimensional electron gas can be made highly resistive at liquid nitrogen temperatures. Thus, local anodic oxidation of high electron mobility transistors with an atomic force ...
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|Date:||13 July 1998|
|Institutions:||Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider|
|Dewey Decimal Classification:||500 Science > 530 Physics|
|Created at the University of Regensburg:||Unknown|
|Deposited On:||09 Nov 2009 13:17|
|Last Modified:||13 Mar 2014 12:02|