Meinel, I. and Hengstmann, T. and Grundler, D. and Heitmann, Detlef and Wegscheider, Werner and Bichler, Max
Magnetization of the Fractional Quantum Hall States.
Physical Review Letters 82 (4), pp. 819-822.
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We observe electron magnetism originating from fractional quantum Hall states in single-layered GaAs heterojunctions. This magnetization is entirely governed by electron-electron interaction effects. The studies were performed at temperatures between 0.3 and 7 K on gated high-mobility two-dimensional electron systems. We observe oscillations in the magnetic moment at various fractional filling ...
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