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Magnetization of the Fractional Quantum Hall States

Meinel, I. and Hengstmann, T. and Grundler, D. and Heitmann, Detlef and Wegscheider, Werner and Bichler, Max (1999) Magnetization of the Fractional Quantum Hall States. Physical Review Letters 82 (4), pp. 819-822.

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Abstract

We observe electron magnetism originating from fractional quantum Hall states in single-layered GaAs heterojunctions. This magnetization is entirely governed by electron-electron interaction effects. The studies were performed at temperatures between 0.3 and 7 K on gated high-mobility two-dimensional electron systems. We observe oscillations in the magnetic moment at various fractional filling ...

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Item Type:Article
Date:25 January 1999
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1103/PhysRevLett.82.819DOI
Related URLs:
URLURL Type
http://link.aps.org/doi/10.1103/PhysRevLett.82.819Publisher
Classification:
NotationType
73.40.Hm, 73.20.Dx, 75.20.-g, 75.30.CrPACS
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:09 Nov 2009 13:33
Last Modified:13 Mar 2014 12:03
Item ID:10893
Owner Only: item control page
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