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In-plane gate single-electron transistor in Ga[Al]As fabricated by scanning probe lithography

Lüscher, S. and Fuhrer, A. and Held, R. and Heinzel, Thomas and Ensslin, Klaus and Wegscheider, Werner (1999) In-plane gate single-electron transistor in Ga[Al]As fabricated by scanning probe lithography. Applied Physics Letters 75 (16), pp. 2452-2454.

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Abstract

A single-electron transistor has been realized in a Ga[Al]As heterostructure by oxidizing lines in the GaAs cap layer with an atomic force microscope. The oxide lines define the boundaries of the quantum dot, the in-plane gate electrodes, and the contacts of the dot to source and drain. Both the number of electrons in the dot as well as its coupling to the leads can be tuned with an additional, ...

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Item Type:Article
Date:18 October 1999
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1063/1.125045DOI
Related URLs:
URLURL Type
http://link.aip.org/link/?APPLAB/75/2452/1Publisher
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:30 Nov 2009 13:09
Last Modified:13 Mar 2014 12:08
Item ID:11006
Owner Only: item control page

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