Shashkin, A. A. and Dolgopolov, V. T. and Deviatov, E. V. and Irmer, B. and Haubrich, A. G. C. and Kotthaus, J .P. and Bichler, Max and Wegscheider, Werner (1999) Lateral tunneling through the controlled barrier between edge channels in a two-dimensional electron system. Zurnal eksperimental'noj i teoreticeskoj fiziki: ZETF 69 (8), p. 561.
Full text not available from this repository.
A study is made of the lateral tunneling between edge channels at the depletion-induced edges of a gated two-dimensional electron system, through a gate-voltage-controlled barrier arising when the donor layer of the heterostructure is partly removed along a fine strip by means of an atomic force microscope. For a sufficiently high barrier the typical current-voltage characteristic is found to be ...
Export bibliographical data
|Institutions:||Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider|
|Dewey Decimal Classification:||500 Science > 530 Physics|
|Created at the University of Regensburg:||Unknown|
|Deposited On:||30 Nov 2009 13:14|
|Last Modified:||30 Nov 2009 13:14|