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Semiconductor nanostructures with short depletion length and stacked gates, patterned with an atomic force microscope

Heinzel, Thomas H. and Held, R. and Lüscher, S. and Ensslin, Klaus and Wegscheider, Werner (2000) Semiconductor nanostructures with short depletion length and stacked gates, patterned with an atomic force microscope. Physica E Low-dimensional Systems and Nanostructures 7 (3-4), pp. 860-863.

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Abstract

We have investigated the electronic properties of the confining potentials obtained by oxidizing the surface of Ga[Al]As heterostructures with an atomic force microscope. From magnetotransport measurements on quantum wires at liquid-helium temperatures we find an extremely small lateral depletion length of (15±5) nm as well as a specularity of the boundary scattering above 95%. Furthermore, we ...

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Item Type:Article
Date:May 2000
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1016/S1386-9477(00)00077-1DOI
Classification:
NotationType
07.79.Lh; 73.20.Dx; 81.05.EdPACS
Keywords:Atomic force microscope; Semiconductor nanostructures; Nanolithography
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:30 Nov 2009 13:22
Last Modified:13 Mar 2014 12:09
Item ID:11039
Owner Only: item control page

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