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In-plane Gate Single Electron Transistor Fabricated by AFM Lithography

Lüscher, S. and Fuhrer, A. and Held, R. and Heinzel, Thomas H. and Ensslin, Klaus and Wegscheider, Werner and Bichler, Max (2000) In-plane Gate Single Electron Transistor Fabricated by AFM Lithography. Journal of Low Temperature Physics 118 (5-6), pp. 333-342.

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Coulomb blockade is observed in semiconductor quantum dotsfabricated by scanning probe lithography. We demonstrate thatby combining top gates with in-plane gates, the lithographicshape of a dot can be transferred into the electron gas withhigh accuracy. Furthermore, by applying voltages to the in-plane gates, the number of electrons on the dot can be changedby more than 70 without changing its ...


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Item type:Article
Date:May 2000
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Identification Number:
73.23 HK, 85.40 Ux, 85.30 Vx, 85.40 HpPACS
Dewey Decimal Classification:500 Science > 530 Physics
Created at the University of Regensburg:Unknown
Deposited on:30 Nov 2009 13:23
Last modified:13 Mar 2014 12:09
Item ID:11041
Owner only: item control page


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