Lüscher, S. and Fuhrer, A. and Held, R. and Heinzel, Thomas H. and Ensslin, Klaus and Wegscheider, Werner and Bichler, Max (2000) In-plane Gate Single Electron Transistor Fabricated by AFM Lithography. Journal of Low Temperature Physics 118 (5-6), pp. 333-342.
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Coulomb blockade is observed in semiconductor quantum dotsfabricated by scanning probe lithography. We demonstrate thatby combining top gates with in-plane gates, the lithographicshape of a dot can be transferred into the electron gas withhigh accuracy. Furthermore, by applying voltages to the in-plane gates, the number of electrons on the dot can be changedby more than 70 without changing its ...
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|Institutions:||Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider|
|Dewey Decimal Classification:||500 Science > 530 Physics|
|Created at the University of Regensburg:||Unknown|
|Deposited On:||30 Nov 2009 13:23|
|Last Modified:||13 Mar 2014 12:09|