Lüscher, S. and Fuhrer, A. and Held, R. and Heinzel, Thomas H. and Ensslin, Klaus and Wegscheider, Werner and Bichler, Max
In-plane Gate Single Electron Transistor Fabricated by AFM Lithography.
Journal of Low Temperature Physics 118 (5-6), pp. 333-342.
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Coulomb blockade is observed in semiconductor quantum dotsfabricated by scanning probe lithography. We demonstrate thatby combining top gates with in-plane gates, the lithographicshape of a dot can be transferred into the electron gas withhigh accuracy. Furthermore, by applying voltages to the in-plane gates, the number of electrons on the dot can be changedby more than 70 without changing its ...
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