Reusch, T. C. G. and Wenderoth, M. and Heinrich, A. J. and Engel, K. J. and Quaas, N. and Sauthoff, K. and Ulbrich, R. G. and Weber, E. R. and Uchida, K. and Wegscheider, Werner
Influence of short-range ordering on roughness of (AlGa)As interfaces studied with cross-sectional scanning tunneling microscopy.
Applied Physics Letters 76 (28), pp. 3882-3883.
Cross-sectional scanning tunneling microscopy was used to identify individual Al atoms on cleaved surfaces of two sets of (AlGa)As heterostructure samples grown with metalorganic vapor-phase epitaxy and molecular-beam epitaxy. We determined the average Al concentration profile perpendicular to the GaAs–(AlGa)As interfaces. Based on former investigations of short-range ordering in (AlGa)As bulk material grown with metalorganic vapor-phase epitaxy, we conclude that short-range ordering during growth of the interfacial layers contributes significantly to the observed interface roughness.