Heinzel, Thomas and Held, R. and Lüscher, S. and Ensslin, Klaus and Wegscheider, Werner and Bichler, Max (2001) Electronic properties of nanostructures defined in Ga[Al]As heterostructures by local oxidation. Physica E Low-dimensional Systems and Nanostructures 9 (1), pp. 84-93.
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Tunable nanostructures can be patterned in Ga[Al]As heterostructures with an atomic force microscope (AFM). Oxidizing the GaAs cap layer locally by applying a voltage to the AFM tip leads to depletion of the electron gas underneath the oxide. Here, we describe this type of AFM lithography as a tool to fabricate tunable nanostructures and characterize the electronic properties of the resulting confinement. As an example for the versatility of this technique, we present conductance measurements on a quantum wire as a function of its position. Conductance fluctuations in real space with a characteristic period of 2 nm are observed and interpreted in terms of individual peaks in the potential landscape the wire hits as it moves through the host crystal.
|Institutions:||Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider|
|Keywords:||Ga[Al]As; Scanning probe lithography; Quantum wires; Conductance uctuations|
|Subjects:||500 Science > 530 Physics|
|Created at the University of Regensburg:||Unknown|
|Deposited On:||30 Nov 2009 13:35|
|Last Modified:||20 Jul 2011 22:09|