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Electronic properties of nanostructures defined in Ga[Al]As heterostructures by local oxidation

Heinzel, Thomas and Held, R. and Lüscher, S. and Ensslin, Klaus and Wegscheider, Werner and Bichler, Max (2001) Electronic properties of nanostructures defined in Ga[Al]As heterostructures by local oxidation. Physica E Low-dimensional Systems and Nanostructures 9 (1), pp. 84-93.

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Abstract

Tunable nanostructures can be patterned in Ga[Al]As heterostructures with an atomic force microscope (AFM). Oxidizing the GaAs cap layer locally by applying a voltage to the AFM tip leads to depletion of the electron gas underneath the oxide. Here, we describe this type of AFM lithography as a tool to fabricate tunable nanostructures and characterize the electronic properties of the resulting ...

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Item Type:Article
Date:January 2001
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1016/S1386-9477(00)00181-8DOI
Keywords:Ga[Al]As; Scanning probe lithography; Quantum wires; Conductance uctuations
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:30 Nov 2009 13:35
Last Modified:13 Mar 2014 12:12
Item ID:11168
Owner Only: item control page
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