Fuhrer, A. and Lüscher, S. and Heinzel, Thomas and Ensslin, Klaus and Wegscheider, Werner and Bichler, Max (2001) Transport properties of quantum dots with steep walls. Physical Review B 63 (12), p. 125309.
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Quantum dots are fabricated in a Ga[Al]As heterostructure by local oxidation with an atomic force microscope. This technique, in combination with top gate voltages, allows us to generate small lateral depletion lengths. The confinement is characterized by low-temperature magnetotransport measurements, from which the dots energy spectrum is reconstructed. We find that in small dots the addition ...
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|Date:||7 March 2001|
|Institutions:||Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider|
|Dewey Decimal Classification:||500 Science > 530 Physics|
|Created at the University of Regensburg:||Unknown|
|Deposited on:||30 Nov 2009 13:44|
|Last modified:||13 Mar 2014 12:12|