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Transport properties of quantum dots with steep walls

Fuhrer, A. and Lüscher, S. and Heinzel, Thomas and Ensslin, Klaus and Wegscheider, Werner and Bichler, Max (2001) Transport properties of quantum dots with steep walls. Physical Review B 63 (12), p. 125309.

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Abstract

Quantum dots are fabricated in a Ga[Al]As heterostructure by local oxidation with an atomic force microscope. This technique, in combination with top gate voltages, allows us to generate small lateral depletion lengths. The confinement is characterized by low-temperature magnetotransport measurements, from which the dots energy spectrum is reconstructed. We find that in small dots the addition ...

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Item Type:Article
Date:7 March 2001
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1103/PhysRevB.63.125309DOI
Related URLs:
URLURL Type
http://link.aps.org/doi/10.1103/PhysRevB.63.125309Publisher
Classification:
NotationType
73.23.Hk, 81.07.-b, 73.23.-b PACS
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:30 Nov 2009 13:44
Last Modified:13 Mar 2014 12:12
Item ID:11175
Owner Only: item control page

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