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Gate-voltage control of spin interactions between electrons and nuclei in a semiconductor

Smet, J. H. and Deutschmann, R. A. and Ertl, F. and Wegscheider, Werner and Abstreiter, Gerhard and Klitzing, Klaus von (2002) Gate-voltage control of spin interactions between electrons and nuclei in a semiconductor. Nature 415, pp. 281-286.

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Abstract

Semiconductors are ubiquitous in device electronics, because their charge distributions can be conveniently manipulated with voltages to perform logic operations. Achieving a similar level of control over the spin degrees of freedom, either from electrons or nuclei, could provide intriguing prospects for both information processing and the study of fundamental solid-state physics issues. Here we ...

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Item Type:Article
Date:17 January 2002
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1038/415281aDOI
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:30 Nov 2009 14:11
Last Modified:13 Mar 2014 12:13
Item ID:11190
Owner Only: item control page
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