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Gate-voltage control of spin interactions between electrons and nuclei in a semiconductor

Smet, J. H. and Deutschmann, R. A. and Ertl, F. and Wegscheider, Werner and Abstreiter, Gerhard and Klitzing, Klaus von (2002) Gate-voltage control of spin interactions between electrons and nuclei in a semiconductor. Nature 415, pp. 281-286.

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Semiconductors are ubiquitous in device electronics, because their charge distributions can be conveniently manipulated with voltages to perform logic operations. Achieving a similar level of control over the spin degrees of freedom, either from electrons or nuclei, could provide intriguing prospects for both information processing and the study of fundamental solid-state physics issues. Here we ...


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Item type:Article
Date:17 January 2002
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
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Dewey Decimal Classification:500 Science > 530 Physics
Created at the University of Regensburg:Unknown
Deposited on:30 Nov 2009 14:11
Last modified:13 Mar 2014 12:13
Item ID:11190
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