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Nonlinear optical response of highly energetic excitons in GaAs: Microscopic electrodynamics at semiconductor interfaces

Betz, M. and Göger, G. and Leitenstorfer, A. and Bichler, Max and Wegscheider, Werner and Abstreiter, Gerhard (2002) Nonlinear optical response of highly energetic excitons in GaAs: Microscopic electrodynamics at semiconductor interfaces. Physical Review B 65 (8), 085314.

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Abstract

A spectroscopic investigation of bound electron-hole pairs in GaAs propagating with large center-of-mass momentum is presented. The approach is based on transmission experiments exploiting the coupling of excitonic polarization to the electromagnetic field of femtosecond laser pulses. The dispersion relations of the coherent excitations are determined up to excess energies of 300 meV above the ...

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Item Type:Article
Date:6 February 2002
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1103/PhysRevB.65.085314DOI
Related URLs:
URLURL Type
http://link.aps.org/doi/10.1103/PhysRevB.65.085314Publisher
Classification:
NotationType
71.35.Cc, 71.36.+c, 72.15.Lh, 78.47.+pPACS
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:30 Nov 2009 14:13
Last Modified:13 Mar 2014 12:13
Item ID:11195
Owner Only: item control page
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