Invited Review Electronic properties of nanostructures defined in Ga[Al]As heterostructures by local oxidation

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.11311

Fuhrer, A. ; Dorn, A. ; Lüscher, S. ; Heinzel, Thomas ; Ensslin, Klaus ; Wegscheider, Werner ; Bichler, Max

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Veröffentlichungsdatum dieses Volltextes: 07 Dez 2009 13:18

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Semiconductor nanostructures are fabricated by local oxidation of Ga[Al]As heterostructures with an atomic force microscope (AFM). The GaAs surface is locally oxidized by applying a bias between the substrate and a conductive AFM tip in a humidity-controlled environment. For high-quality two-dimensional electron gases (2DEGS) located close enough to the sample surface the electrons get depleted ...