Fuhrer, A. and Dorn, A. and Lüscher, S. and Heinzel, Thomas and Ensslin, Klaus and Wegscheider, Werner and Bichler, Max (2002) Invited Review Electronic properties of nanostructures defined in Ga[Al]As heterostructures by local oxidation. Superlattices and Microstructures 31 (1), pp. 19-42.
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Semiconductor nanostructures are fabricated by local oxidation of Ga[Al]As heterostructures with an atomic force microscope (AFM). The GaAs surface is locally oxidized by applying a bias between the substrate and a conductive AFM tip in a humidity-controlled environment. For high-quality two-dimensional electron gases (2DEGS) located close enough to the sample surface the electrons get depleted ...
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|Institutions:||Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider|
|Keywords:||atomic force lithography, semiconductor nanostructures, 2DEG|
|Dewey Decimal Classification:||500 Science > 530 Physics|
|Created at the University of Regensburg:||Unknown|
|Deposited On:||07 Dec 2009 13:18|
|Last Modified:||13 Mar 2014 12:15|