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Invited Review Electronic properties of nanostructures defined in Ga[Al]As heterostructures by local oxidation

Fuhrer, A. and Dorn, A. and Lüscher, S. and Heinzel, Thomas and Ensslin, Klaus and Wegscheider, Werner and Bichler, Max (2002) Invited Review Electronic properties of nanostructures defined in Ga[Al]As heterostructures by local oxidation. Superlattices and Microstructures 31 (1), pp. 19-42.

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Abstract

Semiconductor nanostructures are fabricated by local oxidation of Ga[Al]As heterostructures with an atomic force microscope (AFM). The GaAs surface is locally oxidized by applying a bias between the substrate and a conductive AFM tip in a humidity-controlled environment. For high-quality two-dimensional electron gases (2DEGS) located close enough to the sample surface the electrons get depleted ...

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Export bibliographical data

Item Type:Article
Date:January 2002
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1006/spmi.2002.1015DOI
Classification:
NotationType
71.30.+h, 71.35.-y, 73.21.-b, 78.66.FdPACS
Keywords:atomic force lithography, semiconductor nanostructures, 2DEG
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:07 Dec 2009 13:18
Last Modified:13 Mar 2014 12:15
Item ID:11311
Owner Only: item control page
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