Lüscher, S. and Fuhrer, A. and Held, R. and Heinzel, Thomas and Ensslin, Klaus and Bichler, Max and Wegscheider, Werner (2002) Quantum wires and quantum dots defined by lithography with an atomic force microscope. Microelectronics Journal 33 (4), pp. 319-321.
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Semiconductor nanostructures are realized by patterning AlGaAs/GaAs heterostructures with an atomic force microscope. Steep potential walls, precise pattern transfer and a combination of in-plane and top gates can be achieved with this technique. The electronic properties of nanostructures defined in this way are discussed on two examples, namely a quantum point contact and a single electron transistor. For the quantum point contact we demonstrate quantized conductance at temperatures of 4 K and above. This indicates the strong confinement energy in this system. For the single electron transistor, the realization of special potential shapes and the observation of high-quality Coulomb blockade is shown.
|Institutions:||Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider|
|Keywords:||Atomic force microscope; Nanostructures; Lithography|
|Subjects:||500 Science > 530 Physics|
|Created at the University of Regensburg:||Unknown|
|Deposited On:||07 Dec 2009 13:19|
|Last Modified:||20 Jul 2011 22:11|