Tang, H. X. and Huang, M. H. and Roukes, M. L. and Bichler, Max and Wegscheider, Werner (2002) Two-dimensional electron-gas actuation and transduction for GaAs nanoelectromechanical systems. Applied Physics Letters 81 (20), pp. 3879-3881.
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We have fabricated doubly clamped beams from GaAs/AlGaAs quantum-well heterostructures containing a high-mobility two-dimensional electron gas (2DEG). Applying an rf drive to in-plane side gates excites the beam's mechanical resonance through a dipole–dipole mechanism. Sensitive high-frequency displacement transduction is achieved by measuring the ac emf developed across the 2DEG in the presence ...
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|Date:||11 November 2002|
|Institutions:||Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider|
|Keywords:||gallium arsenide, III-V semiconductors, micromechanical devices, aluminium compounds, two-dimensional electron gas, nanostructured materials, carrier mobility|
|Dewey Decimal Classification:||500 Science > 530 Physics|
|Created at the University of Regensburg:||Unknown|
|Deposited On:||07 Dec 2009 13:22|
|Last Modified:||13 Mar 2014 12:15|