Tang, H. X. and Huang, M. H. and Roukes, M. L. and Bichler, Max and Wegscheider, Werner
Two-dimensional electron-gas actuation and transduction for GaAs nanoelectromechanical systems.
Applied Physics Letters 81 (20), pp. 3879-3881.
We have fabricated doubly clamped beams from GaAs/AlGaAs quantum-well heterostructures containing a high-mobility two-dimensional electron gas (2DEG). Applying an rf drive to in-plane side gates excites the beam's mechanical resonance through a dipole–dipole mechanism. Sensitive high-frequency displacement transduction is achieved by measuring the ac emf developed across the 2DEG in the presence of a constant dc sense current. The high mobility of the incorporated 2DEG provides low-noise, low-power, and high-gain electromechanical displacement sensing through combined piezoelectric and piezoresistive mechanisms.
|Date:||11 November 2002|
|Institutions:|| Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider|
|07.10.Cm; 85.35.-p; 73.61.Ey; 73.50.Dn; 73.50.Gr||PACS|
|Keywords:||gallium arsenide, III-V semiconductors, micromechanical devices, aluminium compounds, two-dimensional electron gas, nanostructured materials, carrier mobility|
|Subjects:||500 Science > 530 Physics|
|Created at the University of Regensburg:||Unknown|
|Deposited On:||07 Dec 2009 13:22|
|Last Modified:||20 Jul 2011 22:11|