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Two-dimensional electron-gas actuation and transduction for GaAs nanoelectromechanical systems

Tang, H. X. and Huang, M. H. and Roukes, M. L. and Bichler, Max and Wegscheider, Werner (2002) Two-dimensional electron-gas actuation and transduction for GaAs nanoelectromechanical systems. Applied Physics Letters 81 (20), pp. 3879-3881.

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Abstract

We have fabricated doubly clamped beams from GaAs/AlGaAs quantum-well heterostructures containing a high-mobility two-dimensional electron gas (2DEG). Applying an rf drive to in-plane side gates excites the beam's mechanical resonance through a dipole–dipole mechanism. Sensitive high-frequency displacement transduction is achieved by measuring the ac emf developed across the 2DEG in the presence ...

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Item Type:Article
Date:11 November 2002
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1063/1.1516237DOI
Related URLs:
URLURL Type
http://link.aip.org/link/?APPLAB/81/3879/1Publisher
Classification:
NotationType
07.10.Cm; 85.35.-p; 73.61.Ey; 73.50.Dn; 73.50.GrPACS
Keywords:gallium arsenide, III-V semiconductors, micromechanical devices, aluminium compounds, two-dimensional electron gas, nanostructured materials, carrier mobility
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:07 Dec 2009 13:22
Last Modified:13 Mar 2014 12:15
Item ID:11317
Owner Only: item control page
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