Kümmler, V. and Brüderl, G. and Bader, S. and Miller, S. and Weimar, A. and Lell, A. and Härle, V. and Schwarz, Ulrich and Gmeinwieser, Nikolaus and Wegscheider, Werner
Degradation Analysis of InGaN Laser Diodes.
physica status solidi a 194 (2), pp. 419-422.
The current status of InGaN-MQW-laser diodes developed at Osram OS is presented. These lasers are grown on n-conducting SiC, enabling a vertical current path, cleaved facets and excellent heat spreading. The temperature rise during cw operation is measured for different mountings. A p-side up mounted diode with thermal resistance of 18 K/W showed 143 h of cw lasing at 1 mW optical power (T = 25 °C). DC and pulsed aging shows current as main degradation reason compared to heat for InGaN-LDs. Photoluminescence spectra of the quantum wells are being compared before and after degradation caused by current.