Deutsch
Kümmler, V. and Brüderl, G. and Bader, S. and Miller, S. and Weimar, A. and Lell, A. and Härle, V. and Schwarz, Ulrich and Gmeinwieser, Nikolaus and Wegscheider, Werner (2002) Degradation Analysis of InGaN Laser Diodes. physica status solidi a 194 (2), pp. 419-422.
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Abstract
The current status of InGaN-MQW-laser diodes developed at Osram OS is presented. These lasers are grown on n-conducting SiC, enabling a vertical current path, cleaved facets and excellent heat spreading. The temperature rise during cw operation is measured for different mountings. A p-side up mounted diode with thermal resistance of 18 K/W showed 143 h of cw lasing at 1 mW optical power (T = 25 °C). DC and pulsed aging shows current as main degradation reason compared to heat for InGaN-LDs. Photoluminescence spectra of the quantum wells are being compared before and after degradation caused by current.
| Item Type: | Article | ||||
|---|---|---|---|---|---|
| Institutions: | Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider | ||||
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| Subjects: | 500 Science > 530 Physics | ||||
| Status: | Published | ||||
| Refereed: | Unknown | ||||
| Created at the University of Regensburg: | Unknown | ||||
| Owner: | Martin Kaiser | ||||
| Deposited On: | 07 Dec 2009 14:26 | ||||
| Last Modified: | 21 Jul 2011 00:11 | ||||
| Item ID: | 11319 |
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