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Planar Hall sensors for micro-Hall magnetometry

Rahm, Michael and Raabe, Jörg and Pulwey, Ralph and Biberger, Josef and Wegscheider, Werner and Weiss, Dieter and Meier, C. (2002) Planar Hall sensors for micro-Hall magnetometry. Journal of Applied Physics 91 (10), p. 7980.

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In this work we present a new method to fabricate planar Hall sensors from GaAs–AlGaAs heterojunctions, which can be used to examine the local stray field at a specific section of a micron-sized magnet. Instead of mesa etching we implanted oxygen ions with an energy of 1.5 keV which deplete the two-dimensional electron gas underneath the exposed areas but leave the wafer flat. Planar double Hall ...


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Item Type:Article
Date:15 May 2002
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
Related URLs:
07.55.Ge; 07.55.Jg; 75.50.Cc; 75.50.Tt; 75.60.Jk; 61.72.Ww; 61.80.Jh; PACS
Keywords:gallium arsenide, aluminium compounds, III-V semiconductors, semiconductor heterojunctions, Hall effect, magnetometers, magnetic field measurement, magnetisation reversal, oxygen, ion implantation, two-dimensional electron gas, Hall effect devices, nickel, magnetic particles, ferromagnetic materials
Subjects:500 Science > 530 Physics
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:07 Dec 2009 13:28
Last Modified:13 Mar 2014 12:16
Item ID:11320
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