Ertl, F. and Asperger, T. and Deutschmann, R. A. and Wegscheider, Werner and Bichler, Max and Böhm, G. and Abstreiter, Gerhard
Vertical field effect transistors realized by cleaved-edge overgrowth.
Physica E Low-dimensional Systems and Nanostructures 13 (2-4), pp. 920-924.
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We present a brief survey of vertical transistor devices fabricated by the cleaved-edge overgrowth technique. Different device types are realized using different transistor substrates grown by molecular beam epitaxy. These substrates mainly vary in the layer sequence and thickness between the source/drain contacts. Common to all designs is the vertical gate structure overgrown on a cleavage plane ...
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