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Vertical field effect transistors realized by cleaved-edge overgrowth

Ertl, F. and Asperger, T. and Deutschmann, R. A. and Wegscheider, Werner and Bichler, Max and Böhm, G. and Abstreiter, Gerhard (2002) Vertical field effect transistors realized by cleaved-edge overgrowth. Physica E Low-dimensional Systems and Nanostructures 13 (2-4), pp. 920-924.

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Abstract

We present a brief survey of vertical transistor devices fabricated by the cleaved-edge overgrowth technique. Different device types are realized using different transistor substrates grown by molecular beam epitaxy. These substrates mainly vary in the layer sequence and thickness between the source/drain contacts. Common to all designs is the vertical gate structure overgrown on a cleavage plane ...

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Item Type:Article
Date:March 2002
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1016/S1386-9477(02)00235-7DOI
Classification:
NotationType
81.16.−c; 85.35.−p; 73.63.−bPACS
Keywords:Cleaved-edge overgrowth; Vertical transistor; DC transport
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:07 Dec 2009 13:29
Last Modified:13 Mar 2014 12:16
Item ID:11324
Owner Only: item control page
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