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Vertical field effect transistors realized by cleaved-edge overgrowth

Ertl, F. and Asperger, T. and Deutschmann, R. A. and Wegscheider, Werner and Bichler, Max and Böhm, G. and Abstreiter, Gerhard (2002) Vertical field effect transistors realized by cleaved-edge overgrowth. Physica E Low-dimensional Systems and Nanostructures 13 (2-4), pp. 920-924.

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We present a brief survey of vertical transistor devices fabricated by the cleaved-edge overgrowth technique. Different device types are realized using different transistor substrates grown by molecular beam epitaxy. These substrates mainly vary in the layer sequence and thickness between the source/drain contacts. Common to all designs is the vertical gate structure overgrown on a cleavage plane ...


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Item type:Article
Date:March 2002
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Identification Number:
81.16.−c; 85.35.−p; 73.63.−bPACS
Keywords:Cleaved-edge overgrowth; Vertical transistor; DC transport
Dewey Decimal Classification:500 Science > 530 Physics
Created at the University of Regensburg:Unknown
Deposited on:07 Dec 2009 13:29
Last modified:13 Mar 2014 12:16
Item ID:11324
Owner only: item control page


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