Ertl, F. and Asperger, T. and Deutschmann, R. A. and Wegscheider, Werner and Bichler, Max and Böhm, G. and Abstreiter, Gerhard (2002) Vertical field effect transistors realized by cleaved-edge overgrowth. Physica E Low-dimensional Systems and Nanostructures 13 (2-4), pp. 920-924.
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We present a brief survey of vertical transistor devices fabricated by the cleaved-edge overgrowth technique. Different device types are realized using different transistor substrates grown by molecular beam epitaxy. These substrates mainly vary in the layer sequence and thickness between the source/drain contacts. Common to all designs is the vertical gate structure overgrown on a cleavage plane ...
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|Institutions:||Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider|
|Keywords:||Cleaved-edge overgrowth; Vertical transistor; DC transport|
|Dewey Decimal Classification:||500 Science > 530 Physics|
|Created at the University of Regensburg:||Unknown|
|Deposited On:||07 Dec 2009 13:29|
|Last Modified:||13 Mar 2014 12:16|