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In situ control of electron gas dimensionality in freely suspended semiconductor membranes

Höhberger, Eva M. and Krämer, Tomas and Wegscheider, Werner and Blick, Robert H. (2003) In situ control of electron gas dimensionality in freely suspended semiconductor membranes. Applied Physics Letters 82 (23), pp. 4160-4162.

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Abstract

We present fabrication and measurements of gated suspended low-dimensional electron systems. The core component of the device is a low-dimensional electron gas embedded in a free-standing beam processed from a GaAs/AlGaAs heterostructure. The dimensionality of the electronic system is fully controlled by a number of gating electrodes on the suspended membranes. Operation in the quantum Hall ...

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Item Type:Article
Date:9 June 2003
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1063/1.1580641DOI
Related URLs:
URLURL Type
http://link.aip.org/link/?APPLAB/82/4160/1Publisher
Classification:
NotationType
73.61.Ey; 73.40.Kp; 73.43.-f;73.21.LaPACS
Keywords: gallium arsenide, aluminium compounds, III-V semiconductors, semiconductor heterojunctions, two-dimensional electron gas, quantum Hall effect, semiconductor quantum dots, membranes
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:14 Dec 2009 13:11
Last Modified:13 Mar 2014 12:16
Item ID:11344
Owner Only: item control page
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