Höhberger, Eva M. and Krämer, Tomas and Wegscheider, Werner and Blick, Robert H.
In situ control of electron gas dimensionality in freely suspended semiconductor membranes.
Applied Physics Letters 82 (23), pp. 4160-4162.
We present fabrication and measurements of gated suspended low-dimensional electron systems. The core component of the device is a low-dimensional electron gas embedded in a free-standing beam processed from a GaAs/AlGaAs heterostructure. The dimensionality of the electronic system is fully controlled by a number of gating electrodes on the suspended membranes. Operation in the quantum Hall regime, in the one-dimensional case, and as zero-dimensional quantum dots is demonstrated. The resulting devices can be applied as ultrasensitive bolometers and as nanoelectromechanical circuits that reach the ultimate limits of displacement detection.
|Date:||9 June 2003|
|Institutions:|| Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider|
|73.61.Ey; 73.40.Kp; 73.43.-f;73.21.La||PACS|
|Keywords:|| gallium arsenide, aluminium compounds, III-V semiconductors, semiconductor heterojunctions, two-dimensional electron gas, quantum Hall effect, semiconductor quantum dots, membranes |
|Subjects:||500 Science > 530 Physics|
|Created at the University of Regensburg:||Unknown|
|Deposited On:||14 Dec 2009 13:11|
|Last Modified:||20 Jul 2011 22:11|