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Combined atomic force microscope and electron-beam lithography used for the fabrication of variable-coupling quantum dots

Rogge, M. C. and Fühner, C. and Keyser, U. F. and Haug, R. J. and Bichler, Max and Abstreiter, Gerhard and Wegscheider, Werner (2003) Combined atomic force microscope and electron-beam lithography used for the fabrication of variable-coupling quantum dots. Applied Physics Letters 83 (6), pp. 1163-1165.

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Abstract

We have combined direct nanofabrication by local anodic oxidation with conventional electron-beam lithography to produce a parallel double quantum dot based on a GaAs/AlGaAs heterostructure. The combination of both nanolithography methods allows fabrication of robust in-plane gates and Cr/Au top-gate electrodes on the same device for optimal controllability. This is illustrated by the tunability ...

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Item Type:Article
Date:11 August 2003
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1063/1.1599972DOI
Related URLs:
URLURL Type
http://link.aip.org/link/?APPLAB/83/1163/1Publisher
Classification:
NotationType
81.16.Nd; 81.16.Ta; 81.07.Ta; 81.05.Ea; 68.47.Fg; 68.65.Hb; 85.40.Hp; 81.65.MqPACS
Keywords:gallium arsenide, aluminium compounds, III-V semiconductors, semiconductor quantum dots, atomic force microscopy, electron beam lithography, nanolithography, anodisation
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:14 Dec 2009 13:20
Last Modified:13 Mar 2014 12:17
Item ID:11353
Owner Only: item control page
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