Rogge, M. C. and Fühner, C. and Keyser, U. F. and Haug, R. J. and Bichler, Max and Abstreiter, Gerhard and Wegscheider, Werner
Combined atomic force microscope and electron-beam lithography used for the fabrication of variable-coupling quantum dots.
Applied Physics Letters 83 (6), pp. 1163-1165.
We have combined direct nanofabrication by local anodic oxidation with conventional electron-beam lithography to produce a parallel double quantum dot based on a GaAs/AlGaAs heterostructure. The combination of both nanolithography methods allows fabrication of robust in-plane gates and Cr/Au top-gate electrodes on the same device for optimal controllability. This is illustrated by the tunability of the interdot coupling in our device. We describe our fabrication and alignment scheme in detail and demonstrate the tunability in low-temperature transport measurements.
|Date:||11 August 2003|
|Institutions:|| Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider|
|81.16.Nd; 81.16.Ta; 81.07.Ta; 81.05.Ea; 68.47.Fg; 68.65.Hb; 85.40.Hp; 81.65.Mq||PACS|
|Keywords:||gallium arsenide, aluminium compounds, III-V semiconductors, semiconductor quantum dots, atomic force microscopy, electron beam lithography, nanolithography, anodisation |
|Subjects:||500 Science > 530 Physics|
|Created at the University of Regensburg:||Unknown|
|Deposited On:||14 Dec 2009 13:20|
|Last Modified:||20 Jul 2011 22:11|