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Nonradiative relaxation times in diagonal transition Si/SiGe quantum cascade structures

Bormann, I. and Brunner, Konrad and Hackenbuchner, S. and Abstreiter, Gerhard and Schmult, Stefan and Wegscheider, Werner (2003) Nonradiative relaxation times in diagonal transition Si/SiGe quantum cascade structures. Applied Physics Letters 83 (26), pp. 5371-5373.

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Abstract

Here, we explore experimentally and theoretically the possibility to prolong the upper hole state nonradiative lifetime of Si/SiGe quantum cascade (QC) structures by using a spatially indirect diagonal transition between two SiGe quantum well ground states. With the recent observation of well resolved midinfrared electroluminescence from heavy hole intersubband transitions in Si/SiGe valence-band ...

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Item Type:Article
Date:29 December 2003
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1063/1.1631381DOI
Related URLs:
URLURL Type
http://link.aip.org/link/?APPLAB/83/5371/1Publisher
Classification:
NotationType
78.60.Fi; 78.67.De; 73.21.Fg; PACS
Keywords:Ge-Si alloys, semiconductor materials, silicon, elemental semiconductors, semiconductor quantum wells, nonradiative transitions, electroluminescence, k.p calculations, carrier lifetime, carrier relaxation time, population inversion
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:15 Dec 2009 08:51
Last Modified:13 Mar 2014 12:18
Item ID:11494
Owner Only: item control page
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