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Strongly confined quantum wire states in strained T-shaped GaAs/InAlAs structures

Schuster, Robert and Hajak, H. and Reinwald, Matthias and Wegscheider, Werner and Schuh, Dieter and Bichler, Max and Abstreiter, Gerhard (2004) Strongly confined quantum wire states in strained T-shaped GaAs/InAlAs structures. Physica E Low-dimensional Systems and Nanostructures 21 (2-4), pp. 236-240.

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Abstract

The confinement energy of T-shaped quantum wires (QWRs), which were fabricated by the cleaved edge overgrowth technique in a way that the QWRs form at the intersection of In0.2Al0.8As stressor layers and the overgrown (1 1 0) GaAs quantum well (QW), is examined using micro-photoluminescence spectroscopy. Photoluminescence (PL) signals from individual QWRs can be spatially resolved, since the ...

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Item Type:Article
Date:March 2004
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1016/j.physe.2003.11.268DOI
Classification:
NotationType
78.55.Cr; 78.67.Lt; 73.21.Hb PACS
Keywords:Confinement energy; Quantum wires; Cleaved edge overgrowth; Micro-photoluminescence; Strain
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:11 Jan 2010 13:02
Last Modified:13 Mar 2014 12:20
Item ID:11800
Owner Only: item control page
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