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Long relaxation times of holes in Si/SiGe quantum cascade structures with a diagonal intersubband transition

Bormann, I. and Brunner, K. and Hackenbuchner, S. and Riedl, H. and Schmult, Stefan and Wegscheider, Werner and Abstreiter, Gerhard (2004) Long relaxation times of holes in Si/SiGe quantum cascade structures with a diagonal intersubband transition. Physica E Low-dimensional Systems and Nanostructures 21 (2-4), pp. 779-782.

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Abstract

In this work we investigate experimentally and theoretically the feasibility to enhance the nonradiative lifetime of the upper heavy hole state in Si/SiGe quantum cascade (QC) structures within a diagonal transition design. The problem of fast nonradiative optical phonon scattering makes it impossible to achieve population inversion with recently demonstrated Si/SiGe QC mid-infrared emitter ...

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Item Type:Article
Date:March 2004
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1016/j.physe.2003.11.123DOI
Classification:
NotationType
78.66.Db; 78.60.−b; 78.67.Pt; 72.10.Di PACS
Keywords:Si; SiGe; Electroluminescence; Quantum cascade; Phonon scattering
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:11 Jan 2010 13:17
Last Modified:13 Mar 2014 12:21
Item ID:11816
Owner Only: item control page

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