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- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.11821
Zusammenfassung
Epitaxial lateral overgrown (ELOG) gallium nitride (GaN) on SiC is being studied as a possible substrate for blue laser diodes. A defect density below 2.2×107 cm–2 in the wings, compared to 2×109 cm–2 in the windows, was achieved. Interaction of the overgrown GaN with the SiO2 mask causes a few degree wing tilt and a transition region of high defect density between windows and wings. Diminished ...
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