Gmeinwieser, Nikolaus and Engl, Karl and Gottfriedsen, P. and Schwarz, Ulrich and Zweck, Josef and Wegscheider, Werner and Miller, S. and Lugauer, H.-J. and Leber, A. and Weimar, A. and Lell, Alfred and Härle, Volker
Correlation of strain, wing tilt, dislocation density, and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates.
Journal of Applied Physics 96 (7), pp. 3666-3672.
at publisher (via DOI)
Epitaxial lateral overgrown (ELOG) gallium nitride (GaN) on SiC is being studied as a possible substrate for blue laser diodes. A defect density below 2.2×107 cm–2 in the wings, compared to 2×109 cm–2 in the windows, was achieved. Interaction of the overgrown GaN with the SiO2 mask causes a few degree wing tilt and a transition region of high defect density between windows and wings. Diminished ...
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|Date:||1 October 2004|
|Institutions:||Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider|
|81.05.Ea; 68.47.Fg; 78.55.Cr; 61.72.Ff; 68.55.Jk; 78.66.Fd; 68.60.Bs;||PACS|
|Keywords:||gallium compounds, III-V semiconductors, semiconductor epitaxial layers, semiconductor growth, wide band gap semiconductors, dislocation density, photoluminescence, X-ray diffraction, scanning electron microscopy, masks, transmission electron microscopy, internal stresses |
|Dewey Decimal Classification:||500 Science > 530 Physics|
|Created at the University of Regensburg:||Unknown|
|Deposited On:||11 Jan 2010 13:19|
|Last Modified:||13 Mar 2014 12:21|