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Correlation of strain, wing tilt, dislocation density, and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates

Gmeinwieser, Nikolaus and Engl, Karl and Gottfriedsen, P. and Schwarz, Ulrich and Zweck, Josef and Wegscheider, Werner and Miller, S. and Lugauer, H.-J. and Leber, A. and Weimar, A. and Lell, Alfred and Härle, Volker (2004) Correlation of strain, wing tilt, dislocation density, and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates. Journal of Applied Physics 96 (7), pp. 3666-3672.

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Abstract

Epitaxial lateral overgrown (ELOG) gallium nitride (GaN) on SiC is being studied as a possible substrate for blue laser diodes. A defect density below 2.2×107 cm–2 in the wings, compared to 2×109 cm–2 in the windows, was achieved. Interaction of the overgrown GaN with the SiO2 mask causes a few degree wing tilt and a transition region of high defect density between windows and wings. Diminished ...

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Item Type:Article
Date:1 October 2004
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1063/1.1784617DOI
Related URLs:
URLURL Type
http://link.aip.org/link/?JAPIAU/96/3666/1Publisher
Classification:
NotationType
81.05.Ea; 68.47.Fg; 78.55.Cr; 61.72.Ff; 68.55.Jk; 78.66.Fd; 68.60.Bs;PACS
Keywords:gallium compounds, III-V semiconductors, semiconductor epitaxial layers, semiconductor growth, wide band gap semiconductors, dislocation density, photoluminescence, X-ray diffraction, scanning electron microscopy, masks, transmission electron microscopy, internal stresses
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:11 Jan 2010 13:19
Last Modified:13 Mar 2014 12:21
Item ID:11821
Owner Only: item control page
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