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Strong charge carrier confinement in purely strain induced GaAs/InAlAs single quantum wires

Schuster, Robert and Hajak, H. and Reinwald, Matthias and Wegscheider, Werner and Schuh, Dieter and Bichler, Max and Abstreiter, Gerhard (2004) Strong charge carrier confinement in purely strain induced GaAs/InAlAs single quantum wires. Applied Physics Letters 85 (17), pp. 3672-3674.

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We report on micro-photoluminescence studies of single quantum wires which were grown by molecular beam epitaxy. Employing the cleaved edge overgrowth technique, quantum wires located in an overgrown (011) oriented GaAs quantum well originate purely from the tensile strain field of InAlAs layers grown along the [100] direction. These stressor layers are separated by 1-µm-wide AlGaAs barriers so ...


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Item Type:Article
Date:25 October 2004
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
Related URLs:
81.07.Vb; 73.21.Hb; 81.05.Ea; 78.67.Lt; 78.67.De; 78.55.Cr; 81.15.HiPACS
Keywords:gallium arsenide, indium compounds, aluminium compounds, III-V semiconductors, molecular beam epitaxial growth, semiconductor growth, semiconductor quantum wires, photoluminescence, excitons, internal stresses, semiconductor quantum wells
Subjects:500 Science > 530 Physics
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:11 Jan 2010 13:22
Last Modified:13 Mar 2014 12:22
Item ID:11827
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