Schuster, Robert and Hajak, H. and Reinwald, Matthias and Wegscheider, Werner and Schuh, Dieter and Bichler, Max and Abstreiter, Gerhard
Strong charge carrier confinement in purely strain induced GaAs/InAlAs single quantum wires.
Applied Physics Letters 85 (17), pp. 3672-3674.
We report on micro-photoluminescence studies of single quantum wires which were grown by molecular beam epitaxy. Employing the cleaved edge overgrowth technique, quantum wires located in an overgrown (011) oriented GaAs quantum well originate purely from the tensile strain field of InAlAs layers grown along the  direction. These stressor layers are separated by 1-µm-wide AlGaAs barriers so that the photoluminescence signals of different quantum wires can be resolved individually. Their confinement energy varies systematically with the widths of the stressor and overgrown layers, reaching values as high as 51.5 meV. The quantum wire signals are characterized by a smooth line shape even for the lowest excitation powers, indicating the absence of pronounced exciton localization.
|Date:||25 October 2004|
|Institutions:|| Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider|
|81.07.Vb; 73.21.Hb; 81.05.Ea; 78.67.Lt; 78.67.De; 78.55.Cr; 81.15.Hi||PACS|
|Keywords:||gallium arsenide, indium compounds, aluminium compounds, III-V semiconductors, molecular beam epitaxial growth, semiconductor growth, semiconductor quantum wires, photoluminescence, excitons, internal stresses, semiconductor quantum wells|
|Subjects:||500 Science > 530 Physics|
|Created at the University of Regensburg:||Unknown|
|Deposited On:||11 Jan 2010 13:22|
|Last Modified:||20 Jul 2011 22:13|