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Spin-dependent tunnelling through epitaxial GaAs(001) and (110) barriers

Zenger, Marcus and Moser, Jürgen and Kreuzer, Stephan and Wegscheider, Werner and Weiss, Dieter (2004) Spin-dependent tunnelling through epitaxial GaAs(001) and (110) barriers. Journal of Physics: Condensed Matter 16 (48), S5823-S5832.

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We investigate transport through 5–10 nm thin epitaxial GaAs(001) and (110) barriers sandwiched between polycrystalline iron films. It turns out that tunnelling is the dominant transport mechanism; this is indicated by a nonlinear I–V-characteristic, an exponential dependence of the tunnelling current on the barrier thickness and the temperature dependence of the current. We observe a pronounced ...


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Item type:Article
Date:8 December 2004
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
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Dewey Decimal Classification:500 Science > 530 Physics
Created at the University of Regensburg:Unknown
Deposited on:11 Jan 2010 13:23
Last modified:13 Mar 2014 12:22
Item ID:11830
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