Gmeinwieser, Nikolaus and Engl, Karl and Schwarz, Ulrich and Zweck, Josef and Wegscheider, Werner and Miller, Stephan and Leber, Andreas and Weimar, Andreas and Lell, Alfred and Härle, Volker
Strain, wing tilt and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates.
physica status solidi a 201 (12), pp. 2760-2763.
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We investigate the epitaxial lateral overgrowth (ELOG) process on silicon carbide (SiC) to obtain defect reduced gallium nitride (GaN). The large wing tilt of about 4 degrees causes bunches of edge dislocations above the edge of the ELOG mask. The PL signal of these regions is diminished and broadened and a defect correlated emission line at about 3.4 eV is detected here exclusively. The GaN ...
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