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Strain, wing tilt and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates

Gmeinwieser, Nikolaus and Engl, Karl and Schwarz, Ulrich and Zweck, Josef and Wegscheider, Werner and Miller, Stephan and Leber, Andreas and Weimar, Andreas and Lell, Alfred and Härle, Volker (2004) Strain, wing tilt and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates. physica status solidi a 201 (12), pp. 2760-2763.

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Abstract

We investigate the epitaxial lateral overgrowth (ELOG) process on silicon carbide (SiC) to obtain defect reduced gallium nitride (GaN). The large wing tilt of about 4 degrees causes bunches of edge dislocations above the edge of the ELOG mask. The PL signal of these regions is diminished and broadened and a defect correlated emission line at about 3.4 eV is detected here exclusively. The GaN ...

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Item Type:Article
Date:2 September 2004
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1002/pssa.200404998DOI
Classification:
NotationType
61.72.Ff; 68.35.Gy; 68.55.Jk; 78.55.Cr; 81.15.GhPACS
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:11 Jan 2010 13:30
Last Modified:13 Mar 2014 12:22
Item ID:11953
Owner Only: item control page

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