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Excitonic signature in gain and carrier induced change of refractive index spectra of (In,Al)GaN quantum well lasers

Schwarz, Ulrich and Sturm, Evi and Wegscheider, Werner and Kümmler, V. and Lell, Alfred and Härle, Volker (2004) Excitonic signature in gain and carrier induced change of refractive index spectra of (In,Al)GaN quantum well lasers. Applied Physics Letters 85 (9), pp. 1475-1477.

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Abstract

The exciton is observed in (In,Al)GaN laser diodes as resonance in the optical gain spectra and in the spectra of the carrier induced change of the refractive index. The observed instability of the exciton with respect to the free electron-hole plasma with increasing carrier densities is accompanied by a blueshift of the exciton resonance due to the quantum confined Stark shift. The experiments ...

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Item Type:Article
Date:30 August 2004
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1063/1.1789243DOI
Related URLs:
URLURL Type
http://link.aip.org/link/?APPLAB/85/1475/1Publisher
Classification:
NotationType
42.55.Px; 85.35.Be; 71.35.Ee; 72.30.+q; 78.20.Ci; 78.67.De; 78.60.FiPACS
Keywords: indium compounds, aluminium compounds, gallium compounds, III-V semiconductors, wide band gap semiconductors, quantum well lasers, excitons, refractive index, spectral line shift, electroluminescence, quantum confined Stark effect, semiconductor plasma, carrier density
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:11 Jan 2010 13:32
Last Modified:13 Mar 2014 12:22
Item ID:11956
Owner Only: item control page
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