Schwarz, Ulrich and Sturm, Evi and Wegscheider, Werner and Kümmler, V. and Lell, Alfred and Härle, Volker (2004) Excitonic signature in gain and carrier induced change of refractive index spectra of (In,Al)GaN quantum well lasers. Applied Physics Letters 85 (9), pp. 1475-1477.
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The exciton is observed in (In,Al)GaN laser diodes as resonance in the optical gain spectra and in the spectra of the carrier induced change of the refractive index. The observed instability of the exciton with respect to the free electron-hole plasma with increasing carrier densities is accompanied by a blueshift of the exciton resonance due to the quantum confined Stark shift. The experiments ...
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|Date:||30 August 2004|
|Institutions:||Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider|
|Keywords:||indium compounds, aluminium compounds, gallium compounds, III-V semiconductors, wide band gap semiconductors, quantum well lasers, excitons, refractive index, spectral line shift, electroluminescence, quantum confined Stark effect, semiconductor plasma, carrier density|
|Dewey Decimal Classification:||500 Science > 530 Physics|
|Created at the University of Regensburg:||Unknown|
|Deposited On:||11 Jan 2010 13:32|
|Last Modified:||13 Mar 2014 12:22|