Wagenhuber, Klaus and Tranitz, H.-P. and Reinwald, Matthias and Wegscheider, Werner
Influence of manganese contamination on high-mobility GaAs/AlGaAs heterostructures.
Applied Physics Letters 85 (7), pp. 1190-1192.
Photoluminescence and magnetotransport measurements have been performed to assess the quality of modulation-doped GaAs/AlGaAs heterostructures. The temporal evolution of the low-temperature electron mobility of samples prepared in a molecular-beam-epitaxy chamber containing manganese as a source material was studied. Mn contamination was identified to be responsible for the reduction of the electron mobility to 1×106 cm2/V s and the appearance of a distinct photoluminescence band. In contrast, structures in which this signal is absent reach mobility values of 5.4×106 cm2/V s. This directly proves that the epitaxy of high-mobility electron systems and structures containing GaMnAs layers, in principle, can be combined in one growth chamber.
|Date:||16 August 2004|
|Institutions:|| Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider|
|73.61.Ey; 78.66.Fd; 81.05.Ea; 81.15.Hi; 78.55.Cr; 73.40.Kp; 73.50.Dn; 73.50.Jt||PACS|
|Keywords:||gallium arsenide, aluminium compounds, III-V semiconductors, semiconductor heterojunctions, photoluminescence, molecular beam epitaxial growth, semiconductor growth, semiconductor epitaxial layers, electron mobility, galvanomagnetic effects, manganese|
|Subjects:||500 Science > 530 Physics|
|Created at the University of Regensburg:||Unknown|
|Deposited On:||11 Jan 2010 13:32|
|Last Modified:||20 Jul 2011 22:14|