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Influence of manganese contamination on high-mobility GaAs/AlGaAs heterostructures

Wagenhuber, Klaus and Tranitz, H.-P. and Reinwald, Matthias and Wegscheider, Werner (2004) Influence of manganese contamination on high-mobility GaAs/AlGaAs heterostructures. Applied Physics Letters 85 (7), pp. 1190-1192.

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Abstract

Photoluminescence and magnetotransport measurements have been performed to assess the quality of modulation-doped GaAs/AlGaAs heterostructures. The temporal evolution of the low-temperature electron mobility of samples prepared in a molecular-beam-epitaxy chamber containing manganese as a source material was studied. Mn contamination was identified to be responsible for the reduction of the ...

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Item Type:Article
Date:16 August 2004
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1063/1.1782262DOI
Related URLs:
URLURL Type
http://link.aip.org/link/?APPLAB/85/1190/1Publisher
Classification:
NotationType
73.61.Ey; 78.66.Fd; 81.05.Ea; 81.15.Hi; 78.55.Cr; 73.40.Kp; 73.50.Dn; 73.50.JtPACS
Keywords:gallium arsenide, aluminium compounds, III-V semiconductors, semiconductor heterojunctions, photoluminescence, molecular beam epitaxial growth, semiconductor growth, semiconductor epitaxial layers, electron mobility, galvanomagnetic effects, manganese
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:11 Jan 2010 13:32
Last Modified:13 Mar 2014 12:22
Item ID:11957
Owner Only: item control page
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