Wagenhuber, Klaus and Tranitz, H.-P. and Reinwald, Matthias and Wegscheider, Werner (2004) Influence of manganese contamination on high-mobility GaAs/AlGaAs heterostructures. Applied Physics Letters 85 (7), pp. 1190-1192.
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Photoluminescence and magnetotransport measurements have been performed to assess the quality of modulation-doped GaAs/AlGaAs heterostructures. The temporal evolution of the low-temperature electron mobility of samples prepared in a molecular-beam-epitaxy chamber containing manganese as a source material was studied. Mn contamination was identified to be responsible for the reduction of the ...
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|Date:||16 August 2004|
|Institutions:||Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider|
|Keywords:||gallium arsenide, aluminium compounds, III-V semiconductors, semiconductor heterojunctions, photoluminescence, molecular beam epitaxial growth, semiconductor growth, semiconductor epitaxial layers, electron mobility, galvanomagnetic effects, manganese|
|Dewey Decimal Classification:||500 Science > 530 Physics|
|Created at the University of Regensburg:||Unknown|
|Deposited On:||11 Jan 2010 13:32|
|Last Modified:||13 Mar 2014 12:22|