Able, Andreas and Wegscheider, Werner and Engl, Karl and Zweck, Josef (2005) Growth of crack-free GaN on Si(1 1 1) with graded AlGaN buffer layers. Journal of Crystal Growth 276 (3-4), pp. 415-418.
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Hexagonal GaN films on Si(1 1 1) substrates have been grown by metalorganic vapor phase epitaxy (MOVPE). High-temperature AlN buffers provided a reliable diffusion barrier to avoid meltback etching. By introducing a thick, graded AlGaN buffer layer, the critical thickness for cracking has been increased to at least 2µm. The films have been characterized by optical microscopy, transmission electron microscopy (TEM) and X-ray diffraction.
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|Institutions:||Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider|
|Keywords:||A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III–V materials|
|Dewey Decimal Classification:||500 Science > 530 Physics|
|Created at the University of Regensburg:||Unknown|
|Deposited On:||11 Jan 2010 13:33|
|Last Modified:||13 Mar 2014 12:23|