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Near-field and far-field dynamics of (Al,In)GaN laser diodes

Schwarz, Ulrich and Pindl, Markus and Wegscheider, Werner and Eichler, Christoph and Scholz, Ferdinand and Furitsch, Michael and Leber, Andreas and Miller, Stephan and Lell, Alfred and Härle, Volker (2005) Near-field and far-field dynamics of (Al,In)GaN laser diodes. Applied Physics Letters 80 (16), p. 161112.

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Near- and far-field dynamics of edge-emitting (Al,In)GaN laser diodes are measured simultaneously with a 100 nm spatial and a 5 ns temporal resolution using a scanning near-field microscope. We reconstruct the phase distribution at the laser diode facet. Beam steering and near-field mode dynamics are interpreted in terms of thermal and carrier induced change of refractive index in the ...


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Item Type:Article
Date:14 April 2005
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
Related URLs:
42.55.Px; 42.60.Jf; 68.37.Uv; PACS
Keywords:aluminium compounds, indium compounds, gallium compounds, III-V semiconductors, wide band gap semiconductors, semiconductor lasers, beam steering, refractive index, carrier density, waveguide lasers, near-field scanning optical microscopy
Subjects:500 Science > 530 Physics
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:11 Jan 2010 13:34
Last Modified:13 Mar 2014 12:23
Item ID:11961
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