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Near-field and far-field dynamics of (Al,In)GaN laser diodes

Schwarz, Ulrich and Pindl, Markus and Wegscheider, Werner and Eichler, Christoph and Scholz, Ferdinand and Furitsch, Michael and Leber, Andreas and Miller, Stephan and Lell, Alfred and Härle, Volker (2005) Near-field and far-field dynamics of (Al,In)GaN laser diodes. Applied Physics Letters 80 (16), p. 161112.

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Abstract

Near- and far-field dynamics of edge-emitting (Al,In)GaN laser diodes are measured simultaneously with a 100 nm spatial and a 5 ns temporal resolution using a scanning near-field microscope. We reconstruct the phase distribution at the laser diode facet. Beam steering and near-field mode dynamics are interpreted in terms of thermal and carrier induced change of refractive index in the waveguide.

Item Type:

Article

Institutions:

Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider

Identification Number:

Value	Type
10.1063/1.1900304	DOI

Related URLs:

URL	URL Type
http://link.aip.org/link/?APPLAB/86/161112/1	Publisher

Classification:

Notation	Type
42.55.Px; 42.60.Jf; 68.37.Uv;	PACS

Keywords:

aluminium compounds, indium compounds, gallium compounds, III-V semiconductors, wide band gap semiconductors, semiconductor lasers, beam steering, refractive index, carrier density, waveguide lasers, near-field scanning optical microscopy

Subjects:

500 Science > 530 Physics

Status:

Published

Refereed:

Unknown

Created at the University of Regensburg:

Unknown

Owner:

Martin Kaiser

Deposited On:

11 Jan 2010 14:34