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Topological defects in the edge-state structure in a bilayer electron system

Deviatov, E. V. and Dolgopolov, V. T. and Würtz, A. and Wixforth, A. and Wegscheider, Werner and Campman, K. L. and Gossard, A. C. (2005) Topological defects in the edge-state structure in a bilayer electron system. Physical Review B (PRB) 72 (4), 041305R.

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Abstract

We experimentally demonstrate formation of pointlike topological defects in the edge-state structure in the quantum Hall effect regime. By using of a selective population technique, we investigate equilibration processes between the edge states in bilayer electron structures with a high tunneling rate between layers. Unexpected flattening of the I-V curves in a perpendicular magnetic field at a ...

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Item Type:Article
Date:14 July 2005
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1103/PhysRevB.72.041305DOI
Related URLs:
URLURL Type
http://link.aps.org/doi/10.1103/PhysRevB.72.041305Publisher
Classification:
NotationType
73.40.Qv, 71.30.+hPACS
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Deposited On:11 Jan 2010 13:35
Last Modified:13 Mar 2014 12:23
Item ID:11962
Owner Only: item control page

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