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Carbon-doped symmetric GaAs/AlGaAs quantum wells with hole mobilities beyond 106 cm2/V s

Gerl, Christian and Tranitz, Hans-Peter and Wegscheider, Werner and Mitzkus, Christian (2005) Carbon-doped symmetric GaAs/AlGaAs quantum wells with hole mobilities beyond 106 cm2/V s. Applied Physics Letters 86 (25), p. 252105.

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Abstract

Utilizing a carbon filament doping source, we prepared two-dimensional hole gases in a symmetric quantum-well structure in the GaAs/AlGaAs heterosystem. Low-temperature hole mobilities up to 1.2×106 cm2/V s at a density of 2.3×1011 cm–2 were achieved on GaAs (001) substrates. In contrast to electron systems, the hole mobility sensitively depends on variations of the quantum-well width and the ...

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Item Type:Article
Date:13 June 2005
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1063/1.1949292DOI
Related URLs:
URLURL Type
http://link.aip.org/link/?APPLAB/86/252105/1Publisher
Classification:
NotationType
81.07.St; 73.63.Hs; 73.40.Kp; 61.72.VvPACS
Keywords:gallium arsenide, aluminium compounds, III-V semiconductors, semiconductor quantum wells, semiconductor doping, hole mobility, two-dimensional hole gas, semiconductor heterojunctions, carbon
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:11 Jan 2010 13:36
Last Modified:13 Mar 2014 12:23
Item ID:11965
Owner Only: item control page
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