Gerl, Christian and Tranitz, Hans-Peter and Wegscheider, Werner and Mitzkus, Christian
Carbon-doped symmetric GaAs/AlGaAs quantum wells with hole mobilities beyond 106 cm2/V s.
Applied Physics Letters 86 (25), p. 252105.
Utilizing a carbon filament doping source, we prepared two-dimensional hole gases in a symmetric quantum-well structure in the GaAs/AlGaAs heterosystem. Low-temperature hole mobilities up to 1.2×106 cm2/V s at a density of 2.3×1011 cm–2 were achieved on GaAs (001) substrates. In contrast to electron systems, the hole mobility sensitively depends on variations of the quantum-well width and the spacer thickness. In particular, an increase of the quantum-well width from an optimal value of 15 nm to 18 nm is accompanied by a 35% reduction of the hole mobility. The quality of ultrahigh-mobility electron systems is not affected by the employed carbon-doping source.
|Date:||13 June 2005|
|Institutions:|| Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider|
|81.07.St; 73.63.Hs; 73.40.Kp; 61.72.Vv||PACS|
|Keywords:||gallium arsenide, aluminium compounds, III-V semiconductors, semiconductor quantum wells, semiconductor doping, hole mobility, two-dimensional hole gas, semiconductor heterojunctions, carbon|
|Subjects:||500 Science > 530 Physics|
|Created at the University of Regensburg:||Unknown|
|Deposited On:||11 Jan 2010 13:36|
|Last Modified:||20 Jul 2011 22:14|