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Carbon-doped high-mobility two-dimensional hole gases on (110) faced GaAs

Schmult, Stefan and Gerl, Christian and Wurstbauer, Ursula and Mitzkus, Christian and Wegscheider, Werner (2005) Carbon-doped high-mobility two-dimensional hole gases on (110) faced GaAs. Applied Physics Letters 86 (20), p. 202105.

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Abstract

Carbon-doped high-mobility two-dimensional hole gases grown on (110) oriented GaAs substrates have been grown with hole mobilities exceeding 106 cm2/Vs in single heterojunction GaAs/AlGaAs structures. At these high mobilities, a pronounced mobility anisotropy has been observed. Rashba induced spin-splitting in these asymmetric structures has been found to be independent on the transport ...

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Item Type:Article
Date:9 May 2005
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1063/1.1926409DOI
Related URLs:
URLURL Type
http://link.aip.org/link/?APPLAB/86/202105/1Publisher
Classification:
NotationType
81.05.Ea; 73.40.Kp;73.61.Ey; 72.20.Fr; 61.72.Vv; PACS
Keywords:gallium arsenide, aluminium compounds, carbon, III-V semiconductors, semiconductor heterojunctions, hole mobility, semiconductor doping
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:11 Jan 2010 13:37
Last Modified:13 Mar 2014 12:23
Item ID:11966
Owner Only: item control page
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