Schmult, Stefan and Gerl, Christian and Wurstbauer, Ursula and Mitzkus, Christian and Wegscheider, Werner (2005) Carbon-doped high-mobility two-dimensional hole gases on (110) faced GaAs. Applied Physics Letters 86 (20), p. 202105.
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Carbon-doped high-mobility two-dimensional hole gases grown on (110) oriented GaAs substrates have been grown with hole mobilities exceeding 106 cm2/Vs in single heterojunction GaAs/AlGaAs structures. At these high mobilities, a pronounced mobility anisotropy has been observed. Rashba induced spin-splitting in these asymmetric structures has been found to be independent on the transport direction.
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|Date:||9 May 2005|
|Institutions:||Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider|
|Keywords:||gallium arsenide, aluminium compounds, carbon, III-V semiconductors, semiconductor heterojunctions, hole mobility, semiconductor doping|
|Dewey Decimal Classification:||500 Science > 530 Physics|
|Created at the University of Regensburg:||Unknown|
|Deposited on:||11 Jan 2010 13:37|
|Last modified:||13 Mar 2014 12:23|