Schmult, Stefan and Gerl, Christian and Wurstbauer, Ursula and Mitzkus, Christian and Wegscheider, Werner
Carbon-doped high-mobility two-dimensional hole gases on (110) faced GaAs.
Applied Physics Letters 86 (20), p. 202105.
Carbon-doped high-mobility two-dimensional hole gases grown on (110) oriented GaAs substrates have been grown with hole mobilities exceeding 106 cm2/Vs in single heterojunction GaAs/AlGaAs structures. At these high mobilities, a pronounced mobility anisotropy has been observed. Rashba induced spin-splitting in these asymmetric structures has been found to be independent on the transport direction.
|Date:||9 May 2005|
|Institutions:|| Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider|
|81.05.Ea; 73.40.Kp;73.61.Ey; 72.20.Fr; 61.72.Vv; ||PACS|
|Keywords:||gallium arsenide, aluminium compounds, carbon, III-V semiconductors, semiconductor heterojunctions, hole mobility, semiconductor doping|
|Subjects:||500 Science > 530 Physics|
|Created at the University of Regensburg:||Unknown|
|Deposited On:||11 Jan 2010 13:37|
|Last Modified:||20 Jul 2011 22:14|