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Local strain and potential distribution induced by single dislocations in GaN

Gmeinwieser, Nikolaus and Gottfriedsen, P. and Schwarz, Ulrich and Wegscheider, Werner and Clos, R. and Krtschil, A. and Krost, A. and Weimar, Andreas and Brüderl, G. and Lell, Alfred and Härle, Volker (2005) Local strain and potential distribution induced by single dislocations in GaN. Journal of Applied Physics 98 (11), p. 116102.

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Abstract

The presence of a threading edge dislocation terminated at the surface of GaN bulk substrates causes a dipole-like strain state ranging over a several micrometer square area. The local strain state is derived from microphotoluminescence mappings of the near-band-edge spectrum and is quantitatively reproduced by a three-dimensional elastic deformation model approach. These results are compared ...

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Item Type:Article
Date:6 December 2005
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1063/1.2137879DOI
Related URLs:
URLURL Type
http://link.aip.org/link/?JAPIAU/98/116102/1Publisher
Classification:
NotationType
61.72.Ff; 78.55.Cr; 78.68.+m; 81.40.Jj; 81.40.Lm; 62.20.Dc; 62.20.FePACS
Keywords:gallium compounds, III-V semiconductors, edge dislocations, photoluminescence, elastic deformation, microscopy
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Deposited On:25 Jan 2010 13:03
Last Modified:13 Mar 2014 12:24
Item ID:11977
Owner Only: item control page

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