Gmeinwieser, Nikolaus and Gottfriedsen, P. and Schwarz, Ulrich and Wegscheider, Werner and Clos, R. and Krtschil, A. and Krost, A. and Weimar, Andreas and Brüderl, G. and Lell, Alfred and Härle, Volker
Local strain and potential distribution induced by single dislocations in GaN.
Journal of Applied Physics 98 (11), p. 116102.
The presence of a threading edge dislocation terminated at the surface of GaN bulk substrates causes a dipole-like strain state ranging over a several micrometer square area. The local strain state is derived from microphotoluminescence mappings of the near-band-edge spectrum and is quantitatively reproduced by a three-dimensional elastic deformation model approach. These results are compared with the local electrical potential distortion due to the core charge and attracted defects as analyzed by scanning surface-potential microscopy. In contrast to the local strain, the potential profile does not show a dipole-like behavior and decreases laterally faster.
|Date:||6 December 2005|
|Institutions:|| Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider|
|61.72.Ff; 78.55.Cr; 78.68.+m; 81.40.Jj; 81.40.Lm; 62.20.Dc; 62.20.Fe||PACS|
|Keywords:||gallium compounds, III-V semiconductors, edge dislocations, photoluminescence, elastic deformation, microscopy |
|Subjects:||500 Science > 530 Physics|
|Created at the University of Regensburg:||Unknown|
|Deposited On:||25 Jan 2010 13:03|
|Last Modified:||20 Jul 2011 22:14|