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Local strain and potential distribution induced by single dislocations in GaN

Gmeinwieser, Nikolaus and Gottfriedsen, P. and Schwarz, Ulrich and Wegscheider, Werner and Clos, R. and Krtschil, A. and Krost, A. and Weimar, Andreas and Brüderl, G. and Lell, Alfred and Härle, Volker (2005) Local strain and potential distribution induced by single dislocations in GaN. Journal of Applied Physics 98 (11), p. 116102.

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The presence of a threading edge dislocation terminated at the surface of GaN bulk substrates causes a dipole-like strain state ranging over a several micrometer square area. The local strain state is derived from microphotoluminescence mappings of the near-band-edge spectrum and is quantitatively reproduced by a three-dimensional elastic deformation model approach. These results are compared ...


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Item Type:Article
Date:6 December 2005
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
Related URLs:
61.72.Ff; 78.55.Cr; 78.68.+m; 81.40.Jj; 81.40.Lm; 62.20.Dc; 62.20.FePACS
Keywords:gallium compounds, III-V semiconductors, edge dislocations, photoluminescence, elastic deformation, microscopy
Subjects:500 Science > 530 Physics
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:25 Jan 2010 13:03
Last Modified:13 Mar 2014 12:24
Item ID:11977
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