Reinwald, Matthias and Wurstbauer, Ursula and Döppe, Matthias and Kipferl, Wolfgang and Wagenhuber, K. and Tranitz, Hans-Peter and Weiss, Dieter and Wegscheider, Werner
Growth of (Ga,Mn)As on GaAs(0 0 1) and (3 1 1)A in a high-mobility MBE system.
Journal of Crystal Growth 278 (1-4), pp. 690-694.
at publisher (via DOI)
We demonstrate the possibility to produce both GaAs/AlGaAs heterostructures with high electron mobilities and (Ga,Mn)As by molecular beam epitaxy (MBE) in the same growth chamber. The (Ga,Mn)As samples have been grown on (0 0 1) and (3 1 1)A GaAs substrates and show state of the art quality. Immediately after (Ga,Mn)As growth, two-dimensional electron systems have been produced which show ...
Export bibliographical data