Growth of (Ga,Mn)As on GaAs(0 0 1) and (3 1 1)A in a high-mobility MBE system

Abstract

We demonstrate the possibility to produce both GaAs/AlGaAs heterostructures with high electron mobilities and (Ga,Mn)As by molecular beam epitaxy (MBE) in the same growth chamber. The (Ga,Mn)As samples have been grown on (0 0 1) and (3 1 1)A GaAs substrates and show state of the art quality. Immediately after (Ga,Mn)As growth, two-dimensional electron systems have been produced which show electron mobilities of up to View the MathML source. Photoluminescence measurements reveal that no manganese has been incorporated into these samples. Magnetotransport measurements on (Ga,Mn)As samples show an anomalous Hall effect if the magnetic field is oriented perpendicular to the sample surface and a giant planar Hall effect if the field is parallel to the surface. By rotating the sample in the field, the magnetic anisotropy of the samples can be analyzed. The high quality GaAs/AlGaAs heterostructures that can be produced in the same MBE system provide an excellent basis for future experiments combining high-mobility heterostructures with ferromagnetic semiconductors.