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Growth of (Ga,Mn)As on GaAs(0 0 1) and (3 1 1)A in a high-mobility MBE system

Reinwald, Matthias and Wurstbauer, Ursula and Döppe, Matthias and Kipferl, Wolfgang and Wagenhuber, K. and Tranitz, Hans-Peter and Weiss, Dieter and Wegscheider, Werner (2005) Growth of (Ga,Mn)As on GaAs(0 0 1) and (3 1 1)A in a high-mobility MBE system. Journal of Crystal Growth 278 (1-4), pp. 690-694.

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Abstract

We demonstrate the possibility to produce both GaAs/AlGaAs heterostructures with high electron mobilities and (Ga,Mn)As by molecular beam epitaxy (MBE) in the same growth chamber. The (Ga,Mn)As samples have been grown on (0 0 1) and (3 1 1)A GaAs substrates and show state of the art quality. Immediately after (Ga,Mn)As growth, two-dimensional electron systems have been produced which show ...

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Item Type:Article
Date:1 May 2005
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1016/j.jcrysgro.2004.12.113DOI
Classification:
NotationType
75.50.Pp; 61.82.Fk; 71.20.NrPACS
Keywords:A3. Molecular beam epitaxy; B1. GaMnAs; B2. Magnetic materials; B2. Semiconducting materials
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:25 Jan 2010 13:04
Last Modified:13 Mar 2014 12:24
Item ID:11979
Owner Only: item control page

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