Cheng, J. L. and Wu, M. W. and Fabian, Jaroslav (2010) Theory of the Spin Relaxation of Conduction Electrons in Silicon. Physical Review Letters (PRL) 104 (1), 016601.
Full text not available from this repository.
A realistic pseudopotential model is introduced to investigate the phonon-induced spin relaxation of conduction electrons in bulk silicon. We find a surprisingly subtle interference of the Elliott and Yafet processes affecting the spin relaxation over a wide temperature range, suppressing the significance of the intravalley spin-flip scattering, previously considered dominant, above roughly 120 K. The calculated spin relaxation times T1 agree with the spin resonance and spin injection data, following a T-3 temperature dependence. The valley anisotropy of T1 and the spin relaxation rates for hot electrons are predicted.
|Date:||4 January 2010|
|Institutions:||Physics > Institute of Theroretical Physics > Chair Professor Richter > Group Jaroslav Fabian|
|Projects:||SPP 1285: Halbleiter Spintronik|
|Subjects:||500 Science > 530 Physics|
|Refereed:||Yes, this version has been refereed|
|Created at the University of Regensburg:||Yes|
|Owner:||Prof. Dr. Jaroslav Fabian|
|Deposited On:||13 Jan 2010 16:34|
|Last Modified:||27 Aug 2012 12:35|