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Theory of the Spin Relaxation of Conduction Electrons in Silicon

Cheng, J. L. and Wu, M. W. and Fabian, Jaroslav (2010) Theory of the Spin Relaxation of Conduction Electrons in Silicon. Physical Review Letters (PRL) 104 (1), 016601.

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Other URL: http://link.aps.org/doi/10.1103/PhysRevLett.104.016601


Abstract

A realistic pseudopotential model is introduced to investigate the phonon-induced spin relaxation of conduction electrons in bulk silicon. We find a surprisingly subtle interference of the Elliott and Yafet processes affecting the spin relaxation over a wide temperature range, suppressing the significance of the intravalley spin-flip scattering, previously considered dominant, above roughly 120 ...

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Item Type:Article
Date:4 January 2010
Institutions:Physics > Institute of Theroretical Physics > Chair Professor Richter > Group Jaroslav Fabian
Projects:SPP 1285: Halbleiter Spintronik
Identification Number:
ValueType
10.1103/PhysRevLett.104.016601DOI
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Owner: Prof. Dr. Jaroslav Fabian
Deposited On:13 Jan 2010 16:34
Last Modified:27 Aug 2012 12:35
Item ID:12028
Owner Only: item control page
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