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Microscopic analysis of optical gain in InGaN/GaN quantum wells

Witzigmann, B. and Laino, V. and Luisier, M. and Schwarz, Ulrich and Feicht, Georg and Wegscheider, Werner and Engl, Karl and Furitsch, Michael and Leber, Andreas and Lell, Alfred and Härle, Volker (2006) Microscopic analysis of optical gain in InGaN/GaN quantum wells. Applied Physics Letters 88 (2), 021104.

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Abstract

A microscopic theory is used to analyze optical gain in InGaN/GaN quantum wells (QW). Experimental data are obtained from Hakki–Paoli measurements on edge-emitting lasers for different carrier densities. The simulations are based on the solution of the quantum kinetic Maxwell–Bloch equations, including many-body effects and a self-consistent treatment of piezoelectric fields. The results confirm ...

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Item Type:Article
Date:11 January 2006
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1063/1.2164907DOI
Related URLs:
URLURL Type
http://link.aip.org/link/?APPLAB/88/021104/1Publisher
Classification:
NotationType
42.55.PxPACS
Keywords:indium compounds, gallium compounds, III-V semiconductors, quantum well lasers, semiconductor device models, carrier density
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:25 Jan 2010 13:07
Last Modified:13 Mar 2014 12:30
Item ID:12177
Owner Only: item control page
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