Witzigmann, B. and Laino, V. and Luisier, M. and Schwarz, Ulrich and Feicht, Georg and Wegscheider, Werner and Engl, Karl and Furitsch, Michael and Leber, Andreas and Lell, Alfred and Härle, Volker
Microscopic analysis of optical gain in InGaN/GaN quantum wells.
Applied Physics Letters 88 (2), 021104.
A microscopic theory is used to analyze optical gain in InGaN/GaN quantum wells (QW). Experimental data are obtained from Hakki–Paoli measurements on edge-emitting lasers for different carrier densities. The simulations are based on the solution of the quantum kinetic Maxwell–Bloch equations, including many-body effects and a self-consistent treatment of piezoelectric fields. The results confirm the validity of a QW gain description for this material system with a substantial inhomogeneous broadening due to structural variation. They also give an estimate of the nonradiative recombination rate.