Engl, Karl and Beer, Martin and Gmeinwieser, Nikolaus and Schwarz, Ulrich and Zweck, Josef and Wegscheider, Werner and Miller, Stephan and Miler, A. and Lugauer, H.-J. and Brüderl, G. and Lell, Alfred and Härle, Volker
Influence of an in situ-deposited SiNx intermediate layer inside GaN and AlGaN layers on SiC substrates.
Journal of Crystal Growth 289 (1), pp. 6-13.
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In this work we present a study on the influence of an in situ grown SiNx intermediate layer inside (Al)GaN epitaxial layers grown on SiC substrates on dislocation densities and material strain of the epitaxial films. A defect density of View the MathML source was achieved by reducing the number of pure edge dislocations in the order of one magnitude. It was found that a reduction of the ...
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