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Influence of an in situ-deposited SiNx intermediate layer inside GaN and AlGaN layers on SiC substrates

Engl, Karl and Beer, Martin and Gmeinwieser, Nikolaus and Schwarz, Ulrich and Zweck, Josef and Wegscheider, Werner and Miller, Stephan and Miler, A. and Lugauer, H.-J. and Brüderl, G. and Lell, Alfred and Härle, Volker (2006) Influence of an in situ-deposited SiNx intermediate layer inside GaN and AlGaN layers on SiC substrates. Journal of Crystal Growth 289 (1), pp. 6-13.

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Abstract

In this work we present a study on the influence of an in situ grown SiNx intermediate layer inside (Al)GaN epitaxial layers grown on SiC substrates on dislocation densities and material strain of the epitaxial films. A defect density of View the MathML source was achieved by reducing the number of pure edge dislocations in the order of one magnitude. It was found that a reduction of the ...

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Item Type:Article
Date:15 March 2006
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1016/j.jcrysgro.2005.10.115DOI
Classification:
NotationType
78.55.Cr; 81.15.Gh; 61.72.Ff; 68.35.Gy; 68.55.JkPACS
Keywords:A1. Characterization; A1. Defects; A l. Dislocation; A1. Etching; B l. GaN
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:25 Jan 2010 13:12
Last Modified:13 Mar 2014 12:30
Item ID:12183
Owner Only: item control page

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