Few-electron quantum dot fabricated with layered scanning force microscope lithography

Abstract

Few-electron quantum dots with integrated charge read-out have been fabricated by layered local anodic oxidation of a Ga[Al]As heterostructure and a thin Titanium top gate. The additional set of gates provided by the metallic film is used to tune the quantum dots into the few-electron regime. Current through the quantum dots and the quantum dot charge have been simultaneously measured for electron numbers varying between zero and two. The singlet–triplet splitting varies in two different samples between 0.5 and 1.5 meV. The Zeeman splitting of the first conductance resonance is observed in parallel magnetic field. The high tunability and straightforward implementation of these structures are promising for future nanostructure design.