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Few-electron quantum dot fabricated with layered scanning force microscope lithography

Sigrist, Martin and Gustavsson, S. and Ihn, Thomas and Ensslin, Klaus and Driscoll, D. and Gossard, A. C. and Reinwald, Matthias and Wegscheider, Werner (2006) Few-electron quantum dot fabricated with layered scanning force microscope lithography. Physica E Low-dimensional Systems and Nanostructures 32 (1-2), pp. 5-8.

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Abstract

Few-electron quantum dots with integrated charge read-out have been fabricated by layered local anodic oxidation of a Ga[Al]As heterostructure and a thin Titanium top gate. The additional set of gates provided by the metallic film is used to tune the quantum dots into the few-electron regime. Current through the quantum dots and the quantum dot charge have been simultaneously measured for ...

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Item Type:Article
Date:May 2006
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1016/j.physe.2005.12.128DOI
Classification:
NotationType
73.23.Hk; 73.63.Kv; 73.21.LaPACS
Keywords:Few-electron quantum dot; Layered lithography; Scanning force microscope
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:25 Jan 2010 13:12
Last Modified:13 Mar 2014 12:30
Item ID:12185
Owner Only: item control page

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