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Few-electron quantum dot fabricated with layered scanning force microscope lithography

Sigrist, Martin and Gustavsson, S. and Ihn, Thomas and Ensslin, Klaus and Driscoll, D. and Gossard, A. C. and Reinwald, Matthias and Wegscheider, Werner (2006) Few-electron quantum dot fabricated with layered scanning force microscope lithography. Physica E Low-dimensional Systems and Nanostructures 32 (1-2), pp. 5-8.

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Few-electron quantum dots with integrated charge read-out have been fabricated by layered local anodic oxidation of a Ga[Al]As heterostructure and a thin Titanium top gate. The additional set of gates provided by the metallic film is used to tune the quantum dots into the few-electron regime. Current through the quantum dots and the quantum dot charge have been simultaneously measured for ...


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Item type:Article
Date:May 2006
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Identification Number:
73.23.Hk; 73.63.Kv; 73.21.LaPACS
Keywords:Few-electron quantum dot; Layered lithography; Scanning force microscope
Dewey Decimal Classification:500 Science > 530 Physics
Created at the University of Regensburg:Unknown
Deposited on:25 Jan 2010 13:12
Last modified:13 Mar 2014 12:30
Item ID:12185
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