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Carbon-doped high-mobility hole gases on (001) and (110) GaAs

Gerl, Christian and Schmult, Stefan and Wurstbauer, Ursula and Tranitz, H.-P. and Mitzkus, Christian and Wegscheider, Werner (2006) Carbon-doped high-mobility hole gases on (001) and (110) GaAs. Journal of Vacuum Science & Technology A 24 (3), pp. 1630-1633.

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Abstract

Since Stormer and Tsang have introduced the two-dimensional hole gas (2DHG) in the GaAs/AlGaAs heterosystem, the choice of suitable dopants was limited to beryllium and silicon over the last 20 years. Both acceptor atoms have significant disadvantages, i.e., either high diffusion rates or a limitation to specific growth directions. Utilizing a carbon filament doping source we prepared ...

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Item Type:Article
Date:May 2006
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1116/1.2192536DOI
Related URLs:
URLURL Type
http://dx.doi.org/10.1116/1.2192536Publisher
Classification:
NotationType
73.21.Fg; 73.63.Hs; 73.43.Qt; 71.70.Ej;PACS
Keywords:two-dimensional hole gas, semiconductor quantum wells, magnetoresistance, quantum Hall effect, spin-orbit interactions, gallium arsenide, III-V semiconductors
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:25 Jan 2010 13:14
Last Modified:13 Mar 2014 12:30
Item ID:12189
Owner Only: item control page
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