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Magnetic anisotropy of Ga1–xMnxAs thin films on GaAs (311)A probed by ferromagnetic resonance

Bihler, C. and Huebl, H. and Brandt, Miriam and Goennenwein, S.T. B. and Reinwald, Matthias and Wurstbauer, Ursula and Döppe, Matthias and Weiss, Dieter and Wegscheider, Werner (2006) Magnetic anisotropy of Ga1–xMnxAs thin films on GaAs (311)A probed by ferromagnetic resonance. Applied Physics Letters 89 (1), 012507.

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We have studied the magnetic anisotropy of Ga1–xMnxAs thin films grown by low-temperature molecular beam epitaxy on GaAs (311)A substrates by means of ferromagnetic resonance spectroscopy. The angular dependence of the ferromagnetic resonance fields observed can be explained by two main contributions to the magnetic anisotropy: a cubic magnetic anisotropy field oriented along the crystallographic ...


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Item Type:Article
Date:7 July 2006
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Projects:SFB 689: Spinphänomene in reduzierten Dimensionen
Identification Number:
Related URLs:
75.50.Pp; 75.50.Dd; 75.50.DdPACS
Keywords:manganese compounds, gallium arsenide, III-V semiconductors, semiconductor epitaxial layers, magnetic epitaxial layers, magnetic semiconductors, ferromagnetic materials, magnetic anisotropy, ferromagnetic resonance
Subjects:500 Science > 530 Physics
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:25 Jan 2010 13:20
Last Modified:13 Mar 2014 12:31
Item ID:12196
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