Startseite UB

Tunneling anisotropic magnetoresistance effect in a p+-(Ga,Mn)As/n+-GaAs Esaki diode

Ciorga, Mariusz and Einwanger, Andreas and Sadowski, Janusz and Wegscheider, Werner and Weiss, Dieter (2007) Tunneling anisotropic magnetoresistance effect in a p+-(Ga,Mn)As/n+-GaAs Esaki diode. physica status solidi a 204 (1), pp. 186-190.

[img]PDF
Download (218kB) - Repository staff only

at publisher (via DOI)


Abstract

We have performed magnetotransport experiments on p+-(Ga,Mn)As/n+-GaAs Esaki diode devices. The spin-valve-like signal was observed in these devices in an in-plane magnetic field configuration due to Tunneling Anisotropic Magnetoresistance effect. The pattern of the observed magnetic reversal process strongly depends on the observed magnetic anisotropy of the (Ga,Mn)As layer - depending on its ...

plus


Export bibliographical data

Item Type:Article
Date:2007
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1002/pssa.200673002DOI
Classification:
NotationType
73.40.Kp; 73.43.Jn; 75.30.Gw; 75.50.Pp; 85.75.-dPACS
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:25 Jan 2010 13:37
Last Modified:13 Mar 2014 12:37
Item ID:12296
Owner Only: item control page
  1. University

University Library

Publication Server

Contact person
Gernot Deinzer

Telefon 0941 943-2759
Contact