Tunneling anisotropic magnetoresistance effect in a p+-(Ga,Mn)As/n+-GaAs Esaki diode

Abstract

We have performed magnetotransport experiments on p+-(Ga,Mn)As/n+-GaAs Esaki diode devices. The spin-valve-like signal was observed in these devices in an in-plane magnetic field configuration due to Tunneling Anisotropic Magnetoresistance effect. The pattern of the observed magnetic reversal process strongly depends on the observed magnetic anisotropy of the (Ga,Mn)As layer - depending on its type the sign of the spin-valve-like signal can be changed by a simple rotation of the magnetic field by 90° or not. The type of the anisotropy is found to be strongly shaped, in a random way, during processing of the wafer.