Tunneling anisotropic magnetoresistance effect in a p+-(Ga,Mn)As/n+-GaAs Esaki diode

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.12296

Ciorga, Mariusz ; Einwanger, Andreas ; Sadowski, Janusz ; Wegscheider, Werner ; Weiss, Dieter

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Veröffentlichungsdatum dieses Volltextes: 25 Jan 2010 13:37

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Zusammenfassung

We have performed magnetotransport experiments on p+-(Ga,Mn)As/n+-GaAs Esaki diode devices. The spin-valve-like signal was observed in these devices in an in-plane magnetic field configuration due to Tunneling Anisotropic Magnetoresistance effect. The pattern of the observed magnetic reversal process strongly depends on the observed magnetic anisotropy of the (Ga,Mn)As layer - depending on its ...